A Physically Based High Frequency Noise Model of MESFET's Taking Static Feedback Effect into Account

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 364
  • Download : 325
DC FieldValueLanguage
dc.contributor.authorHan, Jong-Hee-
dc.contributor.authorKo, Jinsu-
dc.contributor.authorLee, Kwyro-
dc.date.accessioned2011-05-13T01:40:32Z-
dc.date.available2011-05-13T01:40:32Z-
dc.date.created2012-02-06-
dc.date.issued1995-08-
dc.identifier.citation22nd Int. Symp. Compound Semiconductors, v., no.145, pp.725 - 730-
dc.identifier.urihttp://hdl.handle.net/10203/23620-
dc.languageENG-
dc.language.isoen_USen
dc.publisherInstitute of Physics-
dc.titleA Physically Based High Frequency Noise Model of MESFET's Taking Static Feedback Effect into Account-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.issue145-
dc.citation.beginningpage725-
dc.citation.endingpage730-
dc.citation.publicationname22nd Int. Symp. Compound Semiconductors-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorHan, Jong-Hee-
dc.contributor.nonIdAuthorKo, Jinsu-

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0