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1
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Suzuki, R.; Taoka, N.; Yokoyama, M.; Lee, S.; Kim, S. H.; Hoshii, T.; Yasuda, T.; et al, APPLIED PHYSICS LETTERS, v.100, no.13, 2012-03

2
High mobility CMOS technologies using III-V/Ge channels on Si platform

Takagi, S.; Kim, S. -H.; Yokoyama, M.; Zhang, R.; Taoka, N.; Urabe, Y.; Yasuda, T.; et al, SOLID-STATE ELECTRONICS, v.88, pp.2 - 8, 2013-10

3
III-V/Ge MOS device technologies for low power integrated systems

Takagi, S.; Noguchi, M.; Kim, M.; Kim, S. -H.; Chang, C. -Y.; Yokoyama, M.; Nishi, K.; et al, SOLID-STATE ELECTRONICS, v.125, pp.82 - 102, 2016-11

4
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks

Chang, C-Y; Yokoyama, M.; Kim, S-H; Ichikawa, O.; Osada, T.; Hata, M.; Takenaka, M.; et al, MICROELECTRONIC ENGINEERING, v.109, pp.28 - 30, 2013-09

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