Browse "RIMS Collection" by Author Takenaka, Mitsuru
Showing results 15 to 20 of 20
| Self-Aligned Metal Source/Drain InxGa1-x As n-Metal-Oxide-Semiconductor Field-Effect Transistors Using Ni-InGaAs Alloy Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Iida, Ryo; Lee, Sunghoon; Nakane, Ryosho; Urabe, Yuji; et al, APPLIED PHYSICS EXPRESS, v.4, no.2, 2011-02 |
| Self-aligned Ni-GaSb source/drain junctions for GaSb p-channel metal-oxide-semiconductor field-effect transistors Yokoyama, Masafumi; Nishi, Koichi; Kim, Sanghyeon; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi, APPLIED PHYSICS LETTERS, v.104, no.9, 2014-03 |
| Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain Kim, SangHyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, APPLIED PHYSICS LETTERS, v.100, no.19, 2012-05 |
| Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys Nishi, Koichi; Yokoyama, Masafumi; Kim, Sanghyeon; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi, JOURNAL OF APPLIED PHYSICS, v.115, no.3, 2014-01 |
| Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability Kim, Sanghyeon; Yokoyama, Masafumi; Taoka, Noriyuki; Nakane, Ryosho; Yasuda, Tetsuji; Ichikawa, Osamu; Fukuhara, Noboru; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.8, pp.2512 - 2517, 2013-08 |
| Tunnel field-effect transistors with germanium/strained-silicon hetero-junctions for low power applications Kim, Minsoo; Kim, Younghyun; Yokoyama, Masafumi; Nakane, Ryosho; Kim, SangHyeon; Takenaka, Mitsuru; Takagi, Shinichi, THIN SOLID FILMS, v.557, pp.298 - 301, 2014-04 |
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