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III-V/Ge MOS device technologies for low power integrated systems Takagi, S.; Noguchi, M.; Kim, M.; Kim, S. -H.; Chang, C. -Y.; Yokoyama, M.; Nishi, K.; et al, SOLID-STATE ELECTRONICS, v.125, pp.82 - 102, 2016-11 |
Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks Chang, C-Y; Yokoyama, M.; Kim, S-H; Ichikawa, O.; Osada, T.; Hata, M.; Takenaka, M.; et al, MICROELECTRONIC ENGINEERING, v.109, pp.28 - 30, 2013-09 |
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