SrTiO3-based grain boundary barrier layer capacitorSrTio3계 입계절연형 유전체

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Disclosed is an SrTiO.sub.3 -based grain boundary barrier layer capacitor which is superb in dielectric constant and temperature characteristics. It is prepared by infiltrating a liquid-phase oxide mixture into a donor-doped SrTiO.sub.3 matrix to form second-phase dielectric layers at the grain boundaries of the matrix. The liquid-phase oxide mixture comprises CaO and BaO in a particular molar ratio. The SrTiO.sub.3 -based grain boundary barrier capacitor exhibits a high dielectric constant and a low dieletric loss with stable temperature characteristics.
Assignee
KAIST
Country
US (United States)
Issue Date
2001-01-01
Application Date
1999-07-06
Application Number
09348625
Registration Date
2001-01-01
Registration Number
6292355
URI
http://hdl.handle.net/10203/233836
Appears in Collection
MS-Patent(특허)
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