SrTiO3-based grain boundary barrier layer capacitorSrTio3계 입계절연형 유전체
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 강석중 | ko |
| dc.date.accessioned | 2017-12-20T11:19:03Z | - |
| dc.date.available | 2017-12-20T11:19:03Z | - |
| dc.date.issued | 2001-01-01 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/233836 | - |
| dc.description.abstract | Disclosed is an SrTiO.sub.3 -based grain boundary barrier layer capacitor which is superb in dielectric constant and temperature characteristics. It is prepared by infiltrating a liquid-phase oxide mixture into a donor-doped SrTiO.sub.3 matrix to form second-phase dielectric layers at the grain boundaries of the matrix. The liquid-phase oxide mixture comprises CaO and BaO in a particular molar ratio. The SrTiO.sub.3 -based grain boundary barrier capacitor exhibits a high dielectric constant and a low dieletric loss with stable temperature characteristics. | - |
| dc.title | SrTiO3-based grain boundary barrier layer capacitor | - |
| dc.title.alternative | SrTio3계 입계절연형 유전체 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | 강석중 | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 09348625 | - |
| dc.identifier.patentRegistrationNumber | 6292355 | - |
| dc.date.application | 1999-07-06 | - |
| dc.date.registration | 2001-01-01 | - |
| dc.publisher.country | US | - |
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