Method of fabricating a dielectric-modulated field effect transistor comprising a biomolecules layer formed in a space where a sacrificial layer has been removed유전율-변화 전계효과 트랜지스터 및 그 제조 방법
- Assignee
- KAIST
- Country
- US (United States)
- Issue Date
- 2011-04-19
- Application Date
- 2008-01-15
- Application Number
- 12014380
- Registration Date
- 2011-04-19
- Registration Number
- 7927887
- Appears in Collection
- EE-Patent(특허)
- Files in This Item
- There are no files associated with this item.
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