ANOMALOUS TRANSPORT-PROPERTIES OF A NEW COMPOSITIONALLY MODULATED SEMICONDUCTOR-SEMIMETAL SYSTEM - PBTE-BI

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dc.contributor.authorShin, Sung-Chulko
dc.contributor.authorHILLIARD, JEko
dc.contributor.authorKETTERSON, JBko
dc.date.accessioned2011-04-07T07:41:38Z-
dc.date.available2011-04-07T07:41:38Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1984-
dc.identifier.citationJOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.2, no.2, pp.296 - 299-
dc.identifier.issn0734-2101-
dc.identifier.urihttp://hdl.handle.net/10203/23224-
dc.description.sponsorshipThis work was supported by the Office of Naval Research under Grant No. N00014-82-K-5298 and the Northwestern Materials Research Center under NSF Grant No. DMR79-23572en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.titleANOMALOUS TRANSPORT-PROPERTIES OF A NEW COMPOSITIONALLY MODULATED SEMICONDUCTOR-SEMIMETAL SYSTEM - PBTE-BI-
dc.typeArticle-
dc.identifier.wosidA1984SS70300044-
dc.type.rimsART-
dc.citation.volume2-
dc.citation.issue2-
dc.citation.beginningpage296-
dc.citation.endingpage299-
dc.citation.publicationnameJOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS-
dc.identifier.doi10.1116/1.572585-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorShin, Sung-Chul-
dc.contributor.nonIdAuthorHILLIARD, JE-
dc.contributor.nonIdAuthorKETTERSON, JB-
dc.type.journalArticleArticle-
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