DC Field | Value | Language |
---|---|---|
dc.contributor.author | KIM, S | ko |
dc.contributor.author | LEE, H | ko |
dc.contributor.author | HAN, CH | ko |
dc.contributor.author | Lee, Kwyro | ko |
dc.contributor.author | CHOI, S | ko |
dc.contributor.author | JEON, Y | ko |
dc.contributor.author | DIFABRIZIO, E | ko |
dc.contributor.author | GENTILI, M | ko |
dc.date.accessioned | 2011-03-31T05:15:59Z | - |
dc.date.available | 2011-03-31T05:15:59Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1995-01 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v.38, no.1, pp.95 - 99 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | http://hdl.handle.net/10203/23085 | - |
dc.description.abstract | The effects of X-ray irradiation induced damage on long-term reliability of MOS structures have been investigated. The gate leakage currents at low electric field during a measurement of Fowler-Nordheim tunneling were increased after X-ray exposure, it was explained by the interface trap-assisted tunneling mechanism. This leakage component was completely eliminated by forming gas annealing at 450 degrees C. The long-term reliability of MOS gate oxide is significantly affected by the residual damages in the oxide even after forming gas annealing. In X-ray damaged MOS structures, the average values of cumulative charge-to-breakdown (Q(bd)) were reduced about 15% as compared with the unexposed devices. The major mechanism responsible for reduction of Q(bd) in irradiated devices is enhanced electron trapping into the neutral traps. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | SYNCHROTRON RADIATION | - |
dc.subject | DEFECT GENERATION | - |
dc.subject | SILICON DIOXIDE | - |
dc.subject | GATE INSULATORS | - |
dc.subject | LITHOGRAPHY | - |
dc.subject | BIPOLAR | - |
dc.subject | DEVICES | - |
dc.subject | MOSFETS | - |
dc.title | THE EFFECTS OF X-RAY IRRADIATION-INDUCED DAMAGE ON RELIABILITY IN MOS STRUCTURES | - |
dc.type | Article | - |
dc.identifier.wosid | A1995QC42000013 | - |
dc.identifier.scopusid | 2-s2.0-0029220836 | - |
dc.type.rims | ART | - |
dc.citation.volume | 38 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 95 | - |
dc.citation.endingpage | 99 | - |
dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | HAN, CH | - |
dc.contributor.localauthor | Lee, Kwyro | - |
dc.contributor.nonIdAuthor | KIM, S | - |
dc.contributor.nonIdAuthor | LEE, H | - |
dc.contributor.nonIdAuthor | CHOI, S | - |
dc.contributor.nonIdAuthor | JEON, Y | - |
dc.contributor.nonIdAuthor | DIFABRIZIO, E | - |
dc.contributor.nonIdAuthor | GENTILI, M | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | SYNCHROTRON RADIATION | - |
dc.subject.keywordPlus | DEFECT GENERATION | - |
dc.subject.keywordPlus | SILICON DIOXIDE | - |
dc.subject.keywordPlus | GATE INSULATORS | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | BIPOLAR | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | MOSFETS | - |
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