Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor

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dc.contributor.authorCho, Yong Chanko
dc.contributor.authorKim, Sung-Jinko
dc.contributor.authorLee, Seunghunko
dc.contributor.authorKim, Su Jaeko
dc.contributor.authorCho, Chae Ryongko
dc.contributor.authorNahm, Ho-Hyunko
dc.contributor.authorPark, Chul Hongko
dc.contributor.authorJeong, Il Kyoungko
dc.contributor.authorPark, Sungkyunko
dc.contributor.authorHong, Tae Eunko
dc.contributor.authorKuroda, Shinjiko
dc.contributor.authorJeong, Se-Youngko
dc.date.accessioned2017-12-19T03:11:53Z-
dc.date.available2017-12-19T03:11:53Z-
dc.date.created2017-12-08-
dc.date.created2017-12-08-
dc.date.issued2009-10-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.95, no.17-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/228687-
dc.description.abstractWe report a reversible manipulation of short-range spin ordering in Co-doped ZnO through hydrogenation and dehydrogenation processes. In both magnetic-circular dichroism and superconducting quantum interference device measurements, the ferromagnetism was clearly induced and removed by the injection and ejection of hydrogen, respectively. The x-ray photoelectron spectroscopy results and the first-principles electronic structure calculations consistently support the dependence of the ferromagnetism on the hydrogen position and the contribution of transition metal ions. The results suggest the ferromagnetic interaction between Co ions can be reversibly controlled by the hydrogen-mediated intrinsic spin ordering in Co doped ZnO. (C) 2009 American Institute of Physics. [doi:10.1063/1.3257733]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectINITIO MOLECULAR-DYNAMICS-
dc.subjectTOTAL-ENERGY CALCULATIONS-
dc.subjectAUGMENTED-WAVE METHOD-
dc.subjectMAGNETIC SEMICONDUCTORS-
dc.subjectBASIS-SET-
dc.subjectTRANSITION-
dc.subjectMETALS-
dc.subjectOXIDE-
dc.titleReversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor-
dc.typeArticle-
dc.identifier.wosid000271360400048-
dc.type.rimsART-
dc.citation.volume95-
dc.citation.issue17-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.3257733-
dc.contributor.localauthorNahm, Ho-Hyun-
dc.contributor.nonIdAuthorCho, Yong Chan-
dc.contributor.nonIdAuthorKim, Sung-Jin-
dc.contributor.nonIdAuthorLee, Seunghun-
dc.contributor.nonIdAuthorKim, Su Jae-
dc.contributor.nonIdAuthorCho, Chae Ryong-
dc.contributor.nonIdAuthorPark, Chul Hong-
dc.contributor.nonIdAuthorJeong, Il Kyoung-
dc.contributor.nonIdAuthorPark, Sungkyun-
dc.contributor.nonIdAuthorHong, Tae Eun-
dc.contributor.nonIdAuthorKuroda, Shinji-
dc.contributor.nonIdAuthorJeong, Se-Young-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusINITIO MOLECULAR-DYNAMICS-
dc.subject.keywordPlusTOTAL-ENERGY CALCULATIONS-
dc.subject.keywordPlusAUGMENTED-WAVE METHOD-
dc.subject.keywordPlusMAGNETIC SEMICONDUCTORS-
dc.subject.keywordPlusBASIS-SET-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusMETALS-
dc.subject.keywordPlusOXIDE-
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