Dielectric properties of b-SiAlON at high temperature using perturbation method
b-SiAlON with various z-values (z = 0.5~4.0) were produced by hot pressing. The dielectric properties (dielectric constant and tangent loss) of b-SiAlON were characterized by the post-resonator method at room temperature and by the perturbation method from room temperature to 1200 oC at 2.45 GHz, respectively. Effect of z-values and temperatures with b-SiAlON were investigated.
- Publisher
- Trans Tech Publications Ltd.
- Issue Date
- 2009-01
- Language
- English
- Citation
Key Engineering Materials, pp.121 - 123
- ISSN
- 1013-9826
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
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