Dielectric properties of b-SiAlON at high temperature using perturbation method
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Seong, Young-Hoon | ko |
| dc.contributor.author | Kim, Ha Neul | ko |
| dc.contributor.author | Kim, Do Kyung | ko |
| dc.date.accessioned | 2011-03-18T02:39:32Z | - |
| dc.date.available | 2011-03-18T02:39:32Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2009-01 | - |
| dc.identifier.citation | Key Engineering Materials, pp.121 - 123 | - |
| dc.identifier.issn | 1013-9826 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/22784 | - |
| dc.description.abstract | b-SiAlON with various z-values (z = 0.5~4.0) were produced by hot pressing. The dielectric properties (dielectric constant and tangent loss) of b-SiAlON were characterized by the post-resonator method at room temperature and by the perturbation method from room temperature to 1200 oC at 2.45 GHz, respectively. Effect of z-values and temperatures with b-SiAlON were investigated. | - |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | Trans Tech Publications Ltd. | - |
| dc.title | Dielectric properties of b-SiAlON at high temperature using perturbation method | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000266237700033 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 121 | - |
| dc.citation.endingpage | 123 | - |
| dc.citation.publicationname | Key Engineering Materials | - |
| dc.identifier.conferencecountry | GE | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Kim, Do Kyung | - |
| dc.contributor.nonIdAuthor | Seong, Young-Hoon | - |
| dc.contributor.nonIdAuthor | Kim, Ha Neul | - |
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