Design of 20 nm T-Gate MOSFET with Source/Drain-to-Gate Non-Overlapped Structure
- Publisher
- 제10회 반도체학술대회
- Issue Date
- 2003-02
- Language
- Korean
- Citation
제10회 반도체학술대회
- Appears in Collection
- RIMS Conference Papers
- Files in This Item
- There are no files associated with this item.
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