Design of 20 nm T-Gate MOSFET with Source/Drain-to-Gate Non-Overlapped Structure
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 신형철 | ko |
| dc.date.accessioned | 2017-11-08T02:32:22Z | - |
| dc.date.available | 2017-11-08T02:32:22Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-02 | - |
| dc.identifier.citation | 제10회 반도체학술대회 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/226806 | - |
| dc.language | Korean | - |
| dc.publisher | 제10회 반도체학술대회 | - |
| dc.title | Design of 20 nm T-Gate MOSFET with Source/Drain-to-Gate Non-Overlapped Structure | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제10회 반도체학술대회 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | 힐튼호텔 컨벤션센터 | - |
| dc.contributor.localauthor | 신형철 | - |
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