Simultaneously Induced Self-Assembly of Poly(3-hexylthiophene) (P3HT) Nanowires and Thin-Film Fabrication via Solution-Floating Method on a Water Substrate

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dc.contributor.authorKim, Yong-Jaeko
dc.contributor.authorJung, Hee-Taeko
dc.contributor.authorAhn, Chi Wonko
dc.contributor.authorJeon, Hwan-Jinko
dc.date.accessioned2017-11-08T02:21:44Z-
dc.date.available2017-11-08T02:21:44Z-
dc.date.created2017-10-23-
dc.date.created2017-10-23-
dc.date.created2017-10-23-
dc.date.issued2017-10-
dc.identifier.citationADVANCED MATERIALS INTERFACES, v.4, no.19-
dc.identifier.issn2196-7350-
dc.identifier.urihttp://hdl.handle.net/10203/226709-
dc.description.abstractA single-step fabrication of thin film of conjugated polymers (CPs) cannot be employed because inducement of self-assembly of CPs and a thin-film fabrication process are both required. This study introduces a simple and facile one-pot strategy for fabricating uniform, large-area organic semiconducting thin film without complex process. During the solvent evaporation of floated poly(3-hexylthiophene) (P3HT) solution on water substrate, well-dissolved P3HT chains are self-assembled into 1D P3HT nanowires (NWs) with formation of thin film simultaneously. Through systematic transmission electron microscopy (TEM) experiments, this study also reveals for the first time the unique self-assembly mechanism behind the formation of P3HT NWs from the incorporation of P3HT nanoparticles (NPs). In addition, highly uniform organic-inorganic hybrid thin films consisting of well-defined P3HT/quantum dots (QDs) hybrid NWs can be created easily via a solution-floating method by dropping P3HT and QDs dissolved solution. The floated P3HT NWs thin film on the surface of water can be easily transferred onto a Si wafer, bestowing advantages for the fabrication of a high-performance organic field-effect transistor device with a carrier mobility of 0.0856 cm(2) V-1 s(-1).-
dc.languageEnglish-
dc.publisherWILEY-
dc.titleSimultaneously Induced Self-Assembly of Poly(3-hexylthiophene) (P3HT) Nanowires and Thin-Film Fabrication via Solution-Floating Method on a Water Substrate-
dc.typeArticle-
dc.identifier.wosid000412603100003-
dc.identifier.scopusid2-s2.0-85024116549-
dc.type.rimsART-
dc.citation.volume4-
dc.citation.issue19-
dc.citation.publicationnameADVANCED MATERIALS INTERFACES-
dc.identifier.doi10.1002/admi.201700342-
dc.contributor.localauthorJung, Hee-Tae-
dc.contributor.nonIdAuthorAhn, Chi Won-
dc.contributor.nonIdAuthorJeon, Hwan-Jin-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthornanowires-
dc.subject.keywordAuthorOFET-
dc.subject.keywordAuthorP3HT-
dc.subject.keywordAuthorself-assembly-
dc.subject.keywordAuthorthin films-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlus2-DIMENSIONAL CHARGE-TRANSPORT-
dc.subject.keywordPlusMOBILITY CONJUGATED POLYMERS-
dc.subject.keywordPlusOPTOELECTRONIC DEVICES-
dc.subject.keywordPlusSOLAR-CELLS-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusCHANNEL-
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