DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Young Min | ko |
dc.contributor.author | Chalapathy, R. B. V. | ko |
dc.contributor.author | Larina, Liudmila | ko |
dc.contributor.author | Ahn, Byung Tae | ko |
dc.date.accessioned | 2017-11-08T02:21:34Z | - |
dc.date.available | 2017-11-08T02:21:34Z | - |
dc.date.created | 2017-10-23 | - |
dc.date.created | 2017-10-23 | - |
dc.date.issued | 2017-10 | - |
dc.identifier.citation | CRYSTENGCOMM, v.19, no.38, pp.5764 - 5773 | - |
dc.identifier.issn | 1466-8033 | - |
dc.identifier.uri | http://hdl.handle.net/10203/226706 | - |
dc.description.abstract | Ternary earth-abundant Cu2SnS3 (CTS) absorbers were synthesized from a Cu/SnS2 stacked precursor by direct annealing in a S atmosphere and by pre-annealing at lower temperature followed by sulfurization. The existing S within the chosen Cu/SnS2 precursor allows avoiding the interface voids commonly generated from a metal precursor. We found that direct annealing of the S-containing precursor at 570 degrees C in a S atmosphere also generated voids mostly in the middle of the film because a CuS layer is formed on the precursor surface resulting in the discharge of excess S from the SnS2 layer. To eliminate the voids in the CTS film, we developed a two-step annealing process that consists of pre-annealing at 400 degrees C in N-2 and sulfurization at 570 degrees C in a S atmosphere. The developed process yields a void-free CTS film with a smooth surface and tightly-connected grains. The phase evolution in the CTS films was analyzed by X-ray and Raman spectroscopy, and reaction pathways to form a dense Cu2SnS3 film from the Cu/SnS2 precursor are revealed. Our study demonstrated that appropriate design of annealing could grow a large-grain and dense CTS absorber required for a cost-effective thin film solar cell. Photoluminescence analysis confirmed that the CTS film grown by the two-step annealing process exhibited fewer deep-level defects compared to the film grown by direct annealing in a S atmosphere. The conversion efficiency of the solar cell based on the developed absorber is higher than that of a device using a CTS absorber synthesized by direct sulfurization. However, low values of the open-circuit voltage and fill factor indicate that fine control of the CTS composition is necessary to improve the device performance. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | CU-SN-S | - |
dc.subject | SOLAR-CELLS | - |
dc.subject | METALLIC PRECURSORS | - |
dc.subject | PHOTOVOLTAIC PROPERTIES | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | FABRICATION | - |
dc.subject | NANOPARTICLES | - |
dc.subject | DEPOSITION | - |
dc.subject | SULFIDES | - |
dc.subject | SULFUR | - |
dc.title | Growth of a void-free Cu2SnS3 thin film using a Cu/SnS2 precursor through an intermediate-temperature pre-annealing and sulfurization process | - |
dc.type | Article | - |
dc.identifier.wosid | 000412080000011 | - |
dc.identifier.scopusid | 2-s2.0-85030655147 | - |
dc.type.rims | ART | - |
dc.citation.volume | 19 | - |
dc.citation.issue | 38 | - |
dc.citation.beginningpage | 5764 | - |
dc.citation.endingpage | 5773 | - |
dc.citation.publicationname | CRYSTENGCOMM | - |
dc.identifier.doi | 10.1039/c7ce01261f | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Chalapathy, R. B. V. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CU-SN-S | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | METALLIC PRECURSORS | - |
dc.subject.keywordPlus | PHOTOVOLTAIC PROPERTIES | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | SULFIDES | - |
dc.subject.keywordPlus | SULFUR | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.