DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Seong Jun | ko |
dc.contributor.author | Pak, Kwanyong | ko |
dc.contributor.author | Taewook Nam | ko |
dc.contributor.author | Yoon, Alexander | ko |
dc.contributor.author | Kim, Hyungjun | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2017-09-25T06:02:36Z | - |
dc.date.available | 2017-09-25T06:02:36Z | - |
dc.date.created | 2017-09-18 | - |
dc.date.created | 2017-09-18 | - |
dc.date.created | 2017-09-18 | - |
dc.date.created | 2017-09-18 | - |
dc.date.created | 2017-09-18 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.citation | ACS NANO, v.11, no.8, pp.7841 - 7847 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://hdl.handle.net/10203/226136 | - |
dc.description.abstract | Semiconductor integrated circuit chip industries have been striving to introduce porous ultralow-k (ULK) dielectrics into the multilevel interconnection process in order to improve their chip operation speed by reducing capacitance along the signal path. To date, however, highly porous ULK dielectrics (porosity >40%, dielectric constant (k) <2.4) have not been successfully adopted in real devices because the porous nature causes many serious problems, including noncontinuous barrier deposition, penetration of the barrier metal, and reliability issues. Here, a method that allows porous ULK dielectrics to be successfully used with a multilevel interconnection scheme is presented. The surface of the porous ULK dielectric film (k = 2.0, porosity similar to 47%) could be completely sealed by a thin (<2 nm) polymer deposited by a multistep initiated chemical vapor deposition (iCVD) process. Using the iCVD process, a thin pore-sealing layer was localized only to the surface of the porous ULK dielectric film, which could minimize the increase of k; the final effective k was less than 2.2, and the penetration of metal barrier precursors into the dielectric film was completely blocked. The pore-sealed ULK dielectric film also exhibited excellent long-term reliability comparable to a dense low-k dielectric film. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Surface-Localized Sealing of Porous Ultralow-k Dielectric Films with Ultrathin (<2 nm) Polymer Coating | - |
dc.type | Article | - |
dc.identifier.wosid | 000408520900033 | - |
dc.identifier.scopusid | 2-s2.0-85028471281 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 7841 | - |
dc.citation.endingpage | 7847 | - |
dc.citation.publicationname | ACS NANO | - |
dc.identifier.doi | 10.1021/acsnano.7b01998 | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Taewook Nam | - |
dc.contributor.nonIdAuthor | Yoon, Alexander | - |
dc.contributor.nonIdAuthor | Kim, Hyungjun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | pore sealing ultralow-k dielectrics | - |
dc.subject.keywordAuthor | Cu interconnects | - |
dc.subject.keywordAuthor | initiated chemical vapor deposition | - |
dc.subject.keywordAuthor | back-end of line process | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ICVD | - |
dc.subject.keywordPlus | ACRYLATES) | - |
dc.subject.keywordPlus | LAYERS | - |
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