DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Junhwan | ko |
dc.contributor.author | Joo, Munkyu | ko |
dc.contributor.author | Seong, Hyejeong | ko |
dc.contributor.author | Pak, Kwanyong | ko |
dc.contributor.author | Park, Hongkeun | ko |
dc.contributor.author | Park, Chan Woo | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.date.accessioned | 2017-08-08T06:06:36Z | - |
dc.date.available | 2017-08-08T06:06:36Z | - |
dc.date.created | 2017-07-17 | - |
dc.date.created | 2017-07-17 | - |
dc.date.issued | 2017-06 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.9, no.24, pp.20808 - 20817 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/225100 | - |
dc.description.abstract | A series of high-k, ultrathin copolymer gate dielectrics were synthesized from 2-cyanoethyl acrylate (CEA) and di(ethylene glycol) divinyl ether (DEGDVE) monomers by a free radical polymerization via a one-step, vapor-phase, initiated chemical vapor deposition (iCVD) method. The chemical composition of the copolymers was systematically optimized by tuning the input ratio of the vaporized CEA and DEGDVE monomers to achieve a high dielectric constant (k) as well as excellent dielectric strength. Interestingly, DEGDVE was nonhomopolymerizable but it was able to form a copolymer with other kinds of monomers. Utilizing this interesting property of the DEGDVE cross-linker, the dielectric constant of the copolymer film could be maximized with minimum incorporation of the cross-linker moiety. To our knowledge, this is the first report on the synthesis of a cyanide-containing polymer in the vapor phase, where a high-purity polymer film with a maximized dielectric constant was achieved. The dielectric film with the optimized composition showed a dielectric constant greater than 6 and extremely low leakage current densities (< 3 X 10(-8) A/cm(2) in the range of +/- 2 MV/cm), with a thickness of only 20 nm, which is an outstanding thickness for down-scalable cyanide polymer dielectrics. With this high-k dielectric layer, organic thin-film transistors (OTFTs) and oxide TFTs were fabricated, which showed hysteresis-free transfer characteristics with an operating voltage of less than 3 V. Furthermore, the flexible OTFTs retained their low gate leakage current and ideal TFT characteristics even under 2% applied tensile strain, which makes them some of the most flexible OTFTs reported to date. We believe that these ultrathin, high-k organic dielectric films with excellent mechanical flexibility will play a crucial role in future soft electronics. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | ORGANIC TRANSISTORS | - |
dc.subject | HIGH-PERFORMANCE | - |
dc.subject | INSULATING LAYERS | - |
dc.subject | THRESHOLD VOLTAGE | - |
dc.subject | RECENT PROGRESS | - |
dc.subject | DEPOSITION | - |
dc.subject | ELECTRONICS | - |
dc.subject | CAPACITANCE | - |
dc.subject | STABILITY | - |
dc.title | Flexible, Low-Power Thin-Film Transistors Made of Vapor-Phase Synthesized High-k, Ultrathin Polymer Gate Dielectrics | - |
dc.type | Article | - |
dc.identifier.wosid | 000404090000061 | - |
dc.identifier.scopusid | 2-s2.0-85021144205 | - |
dc.type.rims | ART | - |
dc.citation.volume | 9 | - |
dc.citation.issue | 24 | - |
dc.citation.beginningpage | 20808 | - |
dc.citation.endingpage | 20817 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.7b03537 | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.nonIdAuthor | Park, Chan Woo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | gate dielectric | - |
dc.subject.keywordAuthor | polymer thin film | - |
dc.subject.keywordAuthor | initiated chemical vapor deposition (iCVD) | - |
dc.subject.keywordAuthor | polymer dielectric | - |
dc.subject.keywordAuthor | thin-film transistor (TFT) | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | INSULATING LAYERS | - |
dc.subject.keywordPlus | THRESHOLD VOLTAGE | - |
dc.subject.keywordPlus | RECENT PROGRESS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | CAPACITANCE | - |
dc.subject.keywordPlus | STABILITY | - |
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