DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Hyun-Jun | ko |
dc.contributor.author | Lee, Hyun-Mo | ko |
dc.contributor.author | Oh, Keun-Tae | ko |
dc.contributor.author | Park, Jozeph | ko |
dc.contributor.author | Park, Jin-Seong | ko |
dc.date.accessioned | 2017-01-23T02:49:12Z | - |
dc.date.available | 2017-01-23T02:49:12Z | - |
dc.date.created | 2017-01-16 | - |
dc.date.created | 2017-01-16 | - |
dc.date.issued | 2016-12 | - |
dc.identifier.citation | JOURNAL OF ELECTROCERAMICS, v.37, no.1-4, pp.158 - 162 | - |
dc.identifier.issn | 1385-3449 | - |
dc.identifier.uri | http://hdl.handle.net/10203/220134 | - |
dc.description.abstract | High performance thin film transistors (TFTs) based on amorphous In-Sn-Ga-O (ITGO) semiconductor were fabricated. In order to activate the electrical properties of the oxide semiconductor, different processes were used, involving thermal annealing, UV + O-3 (UVO) radiation, and UVO-assisted thermal annealing. While either UV radiation or thermal annealing at 150 A degrees C results in rather poor transfer characteristics, the combination of both allows the fabrication of high performance devices with field effect mobility values exceeding 20 cm(2)/Vs. X-ray photoelectron spectroscopy (XPS) analyses of ITGO films suggest that the density of defects related to oxygen-deficient sites are reduced upon UVO-assisted annealing. Also, hydroxide bonds are found to increase in the semiconductor material, which is highly likely to increase the free carrier concentration. The reduction of oxygen-related defects results in a decrease in charge trap density near the semiconductor/gate dielectric interface, and the UV-assisted annealed ITGO devices exhibit relatively small shifts in the threshold voltage (V-th) under positive bias stress. | - |
dc.language | English | - |
dc.publisher | SPRINGER | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | AMORPHOUS OXIDE SEMICONDUCTORS | - |
dc.title | Enhancement of In-Sn-Ga-O TFT performance by the synergistic combination of UV + O-3 radiation and low temperature annealing | - |
dc.type | Article | - |
dc.identifier.wosid | 000390258300022 | - |
dc.identifier.scopusid | 2-s2.0-84992747272 | - |
dc.type.rims | ART | - |
dc.citation.volume | 37 | - |
dc.citation.issue | 1-4 | - |
dc.citation.beginningpage | 158 | - |
dc.citation.endingpage | 162 | - |
dc.citation.publicationname | JOURNAL OF ELECTROCERAMICS | - |
dc.identifier.doi | 10.1007/s10832-016-0053-y | - |
dc.contributor.localauthor | Park, Jozeph | - |
dc.contributor.nonIdAuthor | Jeong, Hyun-Jun | - |
dc.contributor.nonIdAuthor | Lee, Hyun-Mo | - |
dc.contributor.nonIdAuthor | Oh, Keun-Tae | - |
dc.contributor.nonIdAuthor | Park, Jin-Seong | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Oxide semiconductor | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Ozone | - |
dc.subject.keywordAuthor | UV | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | AMORPHOUS OXIDE SEMICONDUCTORS | - |
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