DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Keonjae | ko |
dc.contributor.author | Ahn, Heejoon | ko |
dc.contributor.author | Motala, Michael J. | ko |
dc.contributor.author | Nuzzo, Ralph G. | ko |
dc.contributor.author | Menard, Etienne | ko |
dc.contributor.author | Rogers, John A. | ko |
dc.date.accessioned | 2011-02-07T09:02:02Z | - |
dc.date.available | 2011-02-07T09:02:02Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-07 | - |
dc.identifier.citation | JOURNAL OF MICROMECHANICS AND MICROENGINEERING, v.20, no.7, pp.075018-1 - 075018-8 | - |
dc.identifier.issn | 0960-1317 | - |
dc.identifier.uri | http://hdl.handle.net/10203/21988 | - |
dc.description.abstract | In this paper, we report a new fabrication route to generate microstructured, single-crystalline silicon (mu s-Si) ribbons using (1 1 0) silicon. Two different methods were explored for producing these printable structures. This work also introduces a second-process innovation in the fabrication of microstructured semiconductor objects for printed large-area circuits, namely the direct integration of a high-quality, thermally grown silicon dioxide (SiO(2)) layer for use as a gate dielectric in top-gate metal-oxide-silicon field effect transistors. We also demonstrate and characterize a soft, conformable lamination process that considerably enhances the mechanical stability of devices printed on plastic, allowing bending radii as small as 0.8 cm. These structures enable a reduction of the bending strains localized at the device interface. These improvements were fully characterized by finite element simulations of the strain distribution present in a descriptive model of the multilayer laminated circuit. | - |
dc.description.sponsorship | This work was supported by the Department of Energy (DEFG02-96ER45439) and the Basic Science Research Program (CAFDC-2010-0009903) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology and used central facilities of the Frederick Seitz Materials Research Laboratory at the University of Illinois Urbana-Champaign. | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Iop Publishing Ltd | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | LARGE-AREA | - |
dc.subject | ELECTRONICS | - |
dc.subject | DISPLAYS | - |
dc.subject | MOBILITY | - |
dc.subject | TECHNOLOGY | - |
dc.subject | MECHANISM | - |
dc.subject | CIRCUITS | - |
dc.subject | RIBBONS | - |
dc.subject | ARRAYS | - |
dc.title | Fabrication of microstructured silicon (mu s-Si) from a bulk Si wafer and its use in the printing of high-performance thin-film transistors on plastic substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000279260400018 | - |
dc.identifier.scopusid | 2-s2.0-77953957560 | - |
dc.type.rims | ART | - |
dc.citation.volume | 20 | - |
dc.citation.issue | 7 | - |
dc.citation.beginningpage | 075018-1 | - |
dc.citation.endingpage | 075018-8 | - |
dc.citation.publicationname | JOURNAL OF MICROMECHANICS AND MICROENGINEERING | - |
dc.identifier.doi | 10.1088/0960-1317/20/7/075018 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Keonjae | - |
dc.contributor.nonIdAuthor | Ahn, Heejoon | - |
dc.contributor.nonIdAuthor | Motala, Michael J. | - |
dc.contributor.nonIdAuthor | Nuzzo, Ralph G. | - |
dc.contributor.nonIdAuthor | Menard, Etienne | - |
dc.contributor.nonIdAuthor | Rogers, John A. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | DISPLAYS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | RIBBONS | - |
dc.subject.keywordPlus | ARRAYS | - |
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