DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sun Jin | ko |
dc.contributor.author | Choi, Hyeongdo | ko |
dc.contributor.author | Kim, Yongjun | ko |
dc.contributor.author | We, Ju Hyung | ko |
dc.contributor.author | Shin, Ji Seon | ko |
dc.contributor.author | Lee, Haneol | ko |
dc.contributor.author | Oh, Min-Wook | ko |
dc.contributor.author | Lee, Keon Jae | ko |
dc.contributor.author | Cho, Byung-Jin | ko |
dc.date.accessioned | 2017-01-12T06:28:59Z | - |
dc.date.available | 2017-01-12T06:28:59Z | - |
dc.date.created | 2016-11-18 | - |
dc.date.created | 2016-11-18 | - |
dc.date.created | 2016-11-18 | - |
dc.date.issued | 2017-01 | - |
dc.identifier.citation | NANO ENERGY, v.31, pp.258 - 263 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.uri | http://hdl.handle.net/10203/218232 | - |
dc.description.abstract | Flexible thermoelectric generators (f-TEGs), fabricated by the screen printing technique, have been introduced as a semi-permanent power source for wearable and flexible electronic systems. However, the output power density of the f-TEG module is still limited due to the low ZT of the screen-printed thermoelectric (TE) film. We herein report a post ionized defect engineering process that effectively controls ionized defects and improves the ZT value of a screen-printed ternary TE film. It was found that post annealing in a forming gas ambient (4% H-2+96% Ar) can reduce the nano- and micro-bismuth oxide particles in screen-printed n-type BiTeSe films, resulting in a bismuth rich condition and creation of bismuth antisite defects. We achieved a maximum ZT of 0.90 with the-screen-printed n-type BiTeSe thick film at-room temperature, which is-almost comparable to that of the bulk Bi2Te2.7Se0.3 and is a 2-fold increase over the same screen-printed film without the hydrogen ambient annealing. To demonstrate the applicability of this approach, a f-TEG device with 72 TE pairs (p-type Bi0.5Sb1.5Te3, forming gas annealed n-type Bi2Te2.7Se0.3) was fabricated by the screen printing technique. The device generated a high output power of 6.32 mW cm(-2) at Delta T=25.6 degrees C. These results demonstrate the feasibility of high performance and large-scale f-TEG fabrication using ionized-defect engineering. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Post ionized defect engineering of the screen-printed Bi2Te2.7Se0.3 thick film for high performance flexible thermoelectric generator | - |
dc.type | Article | - |
dc.identifier.wosid | 000393446500029 | - |
dc.identifier.scopusid | 2-s2.0-84997822104 | - |
dc.type.rims | ART | - |
dc.citation.volume | 31 | - |
dc.citation.beginningpage | 258 | - |
dc.citation.endingpage | 263 | - |
dc.citation.publicationname | NANO ENERGY | - |
dc.identifier.doi | 10.1016/j.nanoen.2016.11.034 | - |
dc.contributor.localauthor | Lee, Keon Jae | - |
dc.contributor.localauthor | Cho, Byung-Jin | - |
dc.contributor.nonIdAuthor | Shin, Ji Seon | - |
dc.contributor.nonIdAuthor | Oh, Min-Wook | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Screen-printed Bi2Te2.7Se0.3 film | - |
dc.subject.keywordAuthor | Post ionized defect engineering | - |
dc.subject.keywordAuthor | Hydrogen annealing | - |
dc.subject.keywordAuthor | Bismuth antisite defect | - |
dc.subject.keywordPlus | ANNEALING PROCESS | - |
dc.subject.keywordPlus | FABRICATION | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.