We have constructed an apparatus for in situ rneasurement of stress of the film prepared by sputtering using an optical noncontact
displacement detector. A change of the gap distance between the detector and the substrate, caused by stress of a deposited film,
was detected bya corresponding change of the rel1ectivity, 11Je sensitivity of the displacement detεctor was 5,9 μV/Á and thus、lt 、.\'US
tumed out to be good enough to detect stress caused by deposition of a monoatomic layer 끼le apparatus was applied to 111 sllu stress
measurements of Co!X(X=Pd or Pt) multilayer thin films prepared on the glass substrates by dc magnetron sputtering. At the vζπ
beginning of the deposition, both Co and X sublayers have subjected to their own intrinsic stresses. However, when the lilm was thicker
than about 100 Á, constant tensile stress in the Co sublayer and compressive stress in the X sublayer were obsεrved‘ which is believed to
be related to a lattice mismatch between the matching planes of Co and X.