IN SITU STRESS MEASUREMENTS OF Co-BASED MULTILAYER FILMS

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dc.contributor.authorKim, Young-Suk-
dc.contributor.authorShin, Sung-Chul-
dc.date.accessioned2011-01-07T01:08:47Z-
dc.date.available2011-01-07T01:08:47Z-
dc.date.issued1995-10-
dc.identifier.citationJournal of Korean Magnetics Society, Vol.5, No.5, pp.470-473en
dc.identifier.urihttp://hdl.handle.net/10203/21442-
dc.description.abstractWe have constructed an apparatus for in situ rneasurement of stress of the film prepared by sputtering using an optical noncontact displacement detector. A change of the gap distance between the detector and the substrate, caused by stress of a deposited film, was detected bya corresponding change of the rel1ectivity, 11Je sensitivity of the displacement detεctor was 5,9 μV/Á and thus、lt 、.\'US tumed out to be good enough to detect stress caused by deposition of a monoatomic layer 끼le apparatus was applied to 111 sllu stress measurements of Co!X(X=Pd or Pt) multilayer thin films prepared on the glass substrates by dc magnetron sputtering. At the vζπ beginning of the deposition, both Co and X sublayers have subjected to their own intrinsic stresses. However, when the lilm was thicker than about 100 Á, constant tensile stress in the Co sublayer and compressive stress in the X sublayer were obsεrved‘ which is believed to be related to a lattice mismatch between the matching planes of Co and X.en
dc.language.isoen_USen
dc.publisher한국자기학회en
dc.titleIN SITU STRESS MEASUREMENTS OF Co-BASED MULTILAYER FILMSen
dc.typeArticleen
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