DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yim, Soonmin | ko |
dc.contributor.author | Sim, Dong Min | ko |
dc.contributor.author | Park, Woon Ik | ko |
dc.contributor.author | Choi, Min-Jae | ko |
dc.contributor.author | Choi, Jaesuk | ko |
dc.contributor.author | Jeon, Jaebeom | ko |
dc.contributor.author | Kim, Kwang Ho | ko |
dc.contributor.author | Jung, Yeon Sik | ko |
dc.date.accessioned | 2016-11-09T07:00:58Z | - |
dc.date.available | 2016-11-09T07:00:58Z | - |
dc.date.created | 2016-10-31 | - |
dc.date.created | 2016-10-31 | - |
dc.date.issued | 2016-08 | - |
dc.identifier.citation | ADVANCED FUNCTIONAL MATERIALS, v.26, no.31, pp.5631 - 5640 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | http://hdl.handle.net/10203/213943 | - |
dc.description.abstract | Precise modulation of electrical and optical properties of 2D transition metal dichalcogenides (TMDs) is required for their application to high-performance devices. Although conventional plasma-based doping methods have provided excellent controllability and reproducibility for bulk or relatively thick TMDs, the application of plasma doping for ultrathin few-layer TMDs has been hindered by serious degradation of their properties. Herein, a reliable and universal doping route is reported for few-layer TMDs by employing surface-shielding nanostructures during a plasma-doping process. It is shown that the surface-protection oxidized polydimethylsiloxane nanostructures obtained from the sub-20 nm self-assembly of Si-containing block copolymers can preserve the integrity of 2D TMDs and maintain high mobility while affording extensive control over the doping level. For example, the self-assembled nanostructures form periodically arranged plasma-blocking and plasma-accepting nanoscale regions for realizing modulated plasma doping on few-layer MoS2, controlling the n-doping level of few-layer MoS2 from 1.9 x 10(11) cm(-2) to 8.1 x 10(11) cm(-2) via the local generation of extra sulfur vacancies without compromising the carrier mobility | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | MOLYBDENUM-DISULFIDE | - |
dc.subject | MONOLAYER MOS2 | - |
dc.subject | LARGE-AREA | - |
dc.subject | GRAPHENE | - |
dc.subject | LITHOGRAPHY | - |
dc.subject | PATTERNS | - |
dc.subject | PHOTOLUMINESCENCE | - |
dc.subject | TRANSPARENT | - |
dc.subject | ARRAYS | - |
dc.title | Surface-Shielding Nanostructures Derived from Self-Assembled Block Copolymers Enable Reliable Plasma Doping for Few-Layer Transition Metal Dichalcogenides | - |
dc.type | Article | - |
dc.identifier.wosid | 000383568300005 | - |
dc.identifier.scopusid | 2-s2.0-84973541940 | - |
dc.type.rims | ART | - |
dc.citation.volume | 26 | - |
dc.citation.issue | 31 | - |
dc.citation.beginningpage | 5631 | - |
dc.citation.endingpage | 5640 | - |
dc.citation.publicationname | ADVANCED FUNCTIONAL MATERIALS | - |
dc.identifier.doi | 10.1002/adfm.201600654 | - |
dc.contributor.localauthor | Jung, Yeon Sik | - |
dc.contributor.nonIdAuthor | Park, Woon Ik | - |
dc.contributor.nonIdAuthor | Kim, Kwang Ho | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | block copolymer | - |
dc.subject.keywordAuthor | molybdenum disulfide | - |
dc.subject.keywordAuthor | plasma doping | - |
dc.subject.keywordAuthor | self-assembly | - |
dc.subject.keywordAuthor | transition metal dichalcogenide | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | MOLYBDENUM-DISULFIDE | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | LITHOGRAPHY | - |
dc.subject.keywordPlus | PATTERNS | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | ARRAYS | - |
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