DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Kim, Eungtaek | ko |
dc.contributor.author | Lee, Myung Keun | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Seol, Myeong-Lok | ko |
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Bang, Tewook | ko |
dc.contributor.author | Jeon, Seung-Bae | ko |
dc.contributor.author | Jun, Sungwoo | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Choi, Kyung Cheol | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2016-11-09T05:31:35Z | - |
dc.date.available | 2016-11-09T05:31:35Z | - |
dc.date.created | 2016-10-19 | - |
dc.date.created | 2016-10-19 | - |
dc.date.issued | 2016-09 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.8, no.36, pp.23820 - 23826 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/213784 | - |
dc.description.abstract | An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of the ETA method was experimentally demonstrated with transparent amorphous In-Ga-Zn-O (a-IGZO) TFTs. The overall electrical performance metrics were boosted by the proposed method: up to 205% for the trans-conductance (g(m)), 158% for the linear current (I-linear) and 206% for the subthreshold swing (SS). The performance enhancement were interpreted by X-ray photoelectron microscopy (XPS), showing a reduction of oxygen vacancies in a-IGZO after the ETA. Furthermore, by virtue of the extremely short operation time (80 ns) of ETA, which neither provokes a delay of the mandatory TFTs operation such as addressing operation for the display refresh nor demands extra physical treatment, the semipermanent use of displays can be realized | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs) | - |
dc.type | Article | - |
dc.identifier.wosid | 000383412000042 | - |
dc.identifier.scopusid | 2-s2.0-84987784819 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 36 | - |
dc.citation.beginningpage | 23820 | - |
dc.citation.endingpage | 23826 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.6b06377 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.localauthor | Choi, Kyung Cheol | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Lee, Myung Keun | - |
dc.contributor.nonIdAuthor | Seol, Myeong-Lok | - |
dc.contributor.nonIdAuthor | Bang, Tewook | - |
dc.contributor.nonIdAuthor | Jun, Sungwoo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | electrothermal annealing (ETA) | - |
dc.subject.keywordAuthor | Joule heat | - |
dc.subject.keywordAuthor | amorphous-oxide-semiconductor (AOS) | - |
dc.subject.keywordAuthor | In-Ga-Zn-O (IGZO) | - |
dc.subject.keywordAuthor | thin-film transistor (TFT) | - |
dc.subject.keywordPlus | DENSITY-OF-STATES | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | EXTRACTION | - |
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