An 8-bit-resolution, 360-mu s write time nonvolatile analog memory based on differentially balanced constant-tunneling-current scheme (DBCS)

Abstract

This paper describes a fast and accurate nonvolatile analog memory (NVAM) and its programming scheme. Both constant programming rate and single-pulse programmability have been achieved, which drastically enhance programming speed and accuracy. A prototype chip containing 8 x 128 NVAM I cells (cell size of 9 x 13.6 mu m(2)) has been fabricated using 0.8-mu m CMOS. Each cell is measured to store more than eight bit levels within 360 mu s.