ENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA)AS GAAS-FETS AT CRYOGENIC TEMPERATURES
- Publisher
- IEE-INST ELEC ENG
- Issue Date
- 1982
- Language
- English
- Article Type
- Article
- Citation
ELECTRONICS LETTERS, v.18, no.24, pp.1057 - 1058
- ISSN
- 0013-5194
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
This item is cited by other documents in WoS
| ⊙ Detail Information in WoSⓡ | Click to see |  |
| ⊙ Cited 16 items in WoS | Click to see citing articles in |  |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.