ENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA)AS GAAS-FETS AT CRYOGENIC TEMPERATURES

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dc.contributor.authorDRUMMOND, TJko
dc.contributor.authorSU, SLko
dc.contributor.authorLYONS, WGko
dc.contributor.authorFISCHER, Rko
dc.contributor.authorKOPP, Wko
dc.contributor.authorMORKOC, Hko
dc.contributor.authorLee, Kwyroko
dc.contributor.authorSHUR, MSko
dc.date.accessioned2011-01-04T02:19:48Z-
dc.date.available2011-01-04T02:19:48Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1982-
dc.identifier.citationELECTRONICS LETTERS, v.18, no.24, pp.1057 - 1058-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/21339-
dc.description.sponsorshipThe research at the University of Illinois was funded by the US Air Force Office of Scientific Research. The work at the University of Minnesota was funded by the US Army Research Office and Honeywell, Inc. The authors would like to express their thanks to Dr. E. Hall, Dr. H. Goronkin and T. Miers of Motorola for providing the FET masks and Dr. A. Y. Cho for fruitful discussions.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherIEE-INST ELEC ENG-
dc.titleENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA)AS GAAS-FETS AT CRYOGENIC TEMPERATURES-
dc.typeArticle-
dc.identifier.wosidA1982PS31500024-
dc.identifier.scopusid2-s2.0-0020206255-
dc.type.rimsART-
dc.citation.volume18-
dc.citation.issue24-
dc.citation.beginningpage1057-
dc.citation.endingpage1058-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el:19820722-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLee, Kwyro-
dc.contributor.nonIdAuthorDRUMMOND, TJ-
dc.contributor.nonIdAuthorSU, SL-
dc.contributor.nonIdAuthorLYONS, WG-
dc.contributor.nonIdAuthorFISCHER, R-
dc.contributor.nonIdAuthorKOPP, W-
dc.contributor.nonIdAuthorMORKOC, H-
dc.contributor.nonIdAuthorSHUR, MS-
dc.type.journalArticleArticle-
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