DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jae Hyun | ko |
dc.contributor.author | Park, Je Young | ko |
dc.contributor.author | Lee, Chang Hwan | ko |
dc.contributor.author | Yoon, Yeo Jin | ko |
dc.contributor.author | Yoo, Jin San | ko |
dc.contributor.author | Ishigaki, Toshikazu | ko |
dc.contributor.author | Kang, Kitaek | ko |
dc.contributor.author | Yoo, Woo Sik | ko |
dc.date.accessioned | 2016-10-04T07:20:47Z | - |
dc.date.available | 2016-10-04T07:20:47Z | - |
dc.date.created | 2016-09-21 | - |
dc.date.created | 2016-09-21 | - |
dc.date.issued | 2016-07 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.34, no.4 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | http://hdl.handle.net/10203/213088 | - |
dc.description.abstract | Higher failure rates have been observed for devices at or adjacent to areas that have been measured or inspected by in-line x-ray during front end of line process steps. The failures are thought to be related to SiO2/Si interface damage caused by x-ray radiation during routine in-line element, material, and process monitoring. This issue has been noted for highly advanced integrated semiconductor devices following device failure mode analysis of Si wafers, with and without x-ray in-line inspection. A multiwavelength room-temperature photoluminescence (RTPL) study was performed to identify the presence of such damage in x-ray irradiated wafers from various types of x-ray inspection steps during device fabrication processes. It was found that x-ray radiation as low as 16 keV induced damage at the SiO2/Si interface. The damage to the SiO2/Si interface was successfully observed by using multiwavelength RTPL wafer mapping. (C) 2016 American Vacuum Society | - |
dc.language | English | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Direct observation of x-ray radiation-induced damage to SiO2/Si interface using multiwavelength room temperature photoluminescence | - |
dc.type | Article | - |
dc.identifier.wosid | 000382207700019 | - |
dc.identifier.scopusid | 2-s2.0-84969697693 | - |
dc.type.rims | ART | - |
dc.citation.volume | 34 | - |
dc.citation.issue | 4 | - |
dc.citation.publicationname | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.identifier.doi | 10.1116/1.4949518 | - |
dc.contributor.nonIdAuthor | Park, Je Young | - |
dc.contributor.nonIdAuthor | Lee, Chang Hwan | - |
dc.contributor.nonIdAuthor | Yoon, Yeo Jin | - |
dc.contributor.nonIdAuthor | Yoo, Jin San | - |
dc.contributor.nonIdAuthor | Ishigaki, Toshikazu | - |
dc.contributor.nonIdAuthor | Kang, Kitaek | - |
dc.contributor.nonIdAuthor | Yoo, Woo Sik | - |
dc.type.journalArticle | Article | - |
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