A NEW EXPERIMENTAL-METHOD (E-PLOT) TO CHARACTERIZE THE SUBSTRATE-CURRENT AND THE SATURATION-VOLTAGE OF FRESH AND HOT-ELECTRON-DAMAGED NMOSFETS
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | KIM, SH | ko |
| dc.contributor.author | MIN, KS | ko |
| dc.contributor.author | Lee, Kwyro | ko |
| dc.date.accessioned | 2010-12-28T01:42:09Z | - |
| dc.date.available | 2010-12-28T01:42:09Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994-01 | - |
| dc.identifier.citation | SOLID-STATE ELECTRONICS, v.37, no.1, pp.198 - 200 | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/21263 | - |
| dc.description.sponsorship | This work was supported by Goldstar Electron Co. Ltd. | en |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
| dc.subject | DEGRADATION | - |
| dc.subject | MOSFETS | - |
| dc.subject | MODEL | - |
| dc.title | A NEW EXPERIMENTAL-METHOD (E-PLOT) TO CHARACTERIZE THE SUBSTRATE-CURRENT AND THE SATURATION-VOLTAGE OF FRESH AND HOT-ELECTRON-DAMAGED NMOSFETS | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1994MQ09900034 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 37 | - |
| dc.citation.issue | 1 | - |
| dc.citation.beginningpage | 198 | - |
| dc.citation.endingpage | 200 | - |
| dc.citation.publicationname | SOLID-STATE ELECTRONICS | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Lee, Kwyro | - |
| dc.contributor.nonIdAuthor | KIM, SH | - |
| dc.contributor.nonIdAuthor | MIN, KS | - |
| dc.type.journalArticle | Note | - |
| dc.subject.keywordPlus | DEGRADATION | - |
| dc.subject.keywordPlus | MOSFETS | - |
| dc.subject.keywordPlus | MODEL | - |
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