Magnetic domains in H-mediated Zn0.9Co0.1O microdisk arrays

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dc.contributor.authorKim, Won-Kyungko
dc.contributor.authorCheon, Miyeonko
dc.contributor.authorLee, Seunghunko
dc.contributor.authorLee, Tae-Wooko
dc.contributor.authorPark, Jung Jinko
dc.contributor.authorCho, Chae Ryongko
dc.contributor.authorPark, Chul Hongko
dc.contributor.authorTakeuchi, Ichiroko
dc.contributor.authorJeong, Se-Youngko
dc.date.accessioned2016-09-07T01:08:53Z-
dc.date.available2016-09-07T01:08:53Z-
dc.date.created2016-08-08-
dc.date.created2016-08-08-
dc.date.issued2016-
dc.identifier.citationRSC ADVANCES, v.6, no.62, pp.S7375 - S7379-
dc.identifier.issn2046-2069-
dc.identifier.urihttp://hdl.handle.net/10203/212505-
dc.description.abstractIn this study, we have fabricated and studied magnetic domains in the periodic H-mediated Zn0.9Co0.1O (H-ZCO) microdisk structures at room temperature with the MFM technique. The results of MFM show that the z-component of the remanent magnetic moment is uniform even though the value is much smaller than that of the saturation magnetic moment. In the investigation of H-ZCO microdisk arrays in different volumes, the magnetic domains observed on different sizes of the H-ZCO microdisks exhibited the same magnetic domain characteristics, perpendicular magnetization, regardless of the volume. Also, we confirmed that the ferromagnetism in the H-ZnCoO system is mediated by hydrogens with the MFM results of ZnCoO hydrogen injected and dehydrogenated-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.subjectROOM-TEMPERATURE FERROMAGNETISM-
dc.subjectWALL MOTION-
dc.subjectSPINTRONICS-
dc.subjectOXIDE-
dc.subjectSEMICONDUCTORS-
dc.subjectMEMORY-
dc.titleMagnetic domains in H-mediated Zn0.9Co0.1O microdisk arrays-
dc.typeArticle-
dc.identifier.wosid000378755200083-
dc.identifier.scopusid2-s2.0-84976345044-
dc.type.rimsART-
dc.citation.volume6-
dc.citation.issue62-
dc.citation.beginningpageS7375-
dc.citation.endingpageS7379-
dc.citation.publicationnameRSC ADVANCES-
dc.identifier.doi10.1039/c6ra05746b-
dc.contributor.nonIdAuthorKim, Won-Kyung-
dc.contributor.nonIdAuthorCheon, Miyeon-
dc.contributor.nonIdAuthorLee, Seunghun-
dc.contributor.nonIdAuthorPark, Jung Jin-
dc.contributor.nonIdAuthorCho, Chae Ryong-
dc.contributor.nonIdAuthorPark, Chul Hong-
dc.contributor.nonIdAuthorTakeuchi, Ichiro-
dc.contributor.nonIdAuthorJeong, Se-Young-
dc.type.journalArticleArticle-
dc.subject.keywordPlusROOM-TEMPERATURE FERROMAGNETISM-
dc.subject.keywordPlusWALL MOTION-
dc.subject.keywordPlusSPINTRONICS-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusMEMORY-
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