Temperature dependence of spin Hall magnetoresistance in W/CoFeB bilayer

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dc.contributor.authorOkuno, Takayako
dc.contributor.authorTaniguchi, Takuyako
dc.contributor.authorKim, Sanghoonko
dc.contributor.authorBaek, Seung-heon Chrisko
dc.contributor.authorPark, Byong-Gukko
dc.contributor.authorMoriyama, Takahiroko
dc.contributor.authorKim, Kab-Jinko
dc.contributor.authorOno, Teruoko
dc.date.accessioned2016-09-07T01:04:17Z-
dc.date.available2016-09-07T01:04:17Z-
dc.date.created2016-08-08-
dc.date.created2016-08-08-
dc.date.created2016-08-08-
dc.date.created2016-08-08-
dc.date.issued2016-08-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.8, pp.080308-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10203/212458-
dc.description.abstractWe investigate the temperature dependence of the spin Hall magnetoresistance (SMR) in a W/CoFeB bilayer. The SMR is found to increase with decreasing temperature. An analysis based on the SMR theory suggests that the spin Hall angle of W and/or the spin polarization of CoFeB can be the origin of the temperature dependence of the SMR. We also find that the spin diffusion length and the resistivity of W do not significantly vary with temperature, which indicates the necessity of further study on the electron transport mechanism in W films to reveal the origin of the spin Hall effect in W. (C) 2016 The Japan Society of Applied Physic-
dc.languageEnglish-
dc.publisherIOP PUBLISHING LTD-
dc.titleTemperature dependence of spin Hall magnetoresistance in W/CoFeB bilayer-
dc.typeArticle-
dc.identifier.wosid000379698900008-
dc.identifier.scopusid2-s2.0-84981335330-
dc.type.rimsART-
dc.citation.volume55-
dc.citation.issue8-
dc.citation.beginningpage080308-
dc.citation.publicationnameJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.7567/JJAP.55.080308-
dc.contributor.localauthorPark, Byong-Guk-
dc.contributor.localauthorKim, Kab-Jin-
dc.contributor.nonIdAuthorOkuno, Takaya-
dc.contributor.nonIdAuthorTaniguchi, Takuya-
dc.contributor.nonIdAuthorKim, Sanghoon-
dc.contributor.nonIdAuthorMoriyama, Takahiro-
dc.contributor.nonIdAuthorOno, Teruo-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusDOMAIN-WALLS-
dc.subject.keywordPlusTORQUE-
dc.subject.keywordPlusSEMICONDUCTORS-
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