DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Seul Ki | ko |
dc.contributor.author | Kim, Ji Eun | ko |
dc.contributor.author | Kim, Sang Ouk | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2010-12-14T08:50:37Z | - |
dc.date.available | 2010-12-14T08:50:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-09 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.31, no.9, pp.1005 - 1007 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/21017 | - |
dc.description.abstract | A resistive switching memory device based on graphene oxide (GO) is presented. It is found that the resistive switching characteristic has a strong dependence on electrode material and GO thickness. In our experiment, an Al/GO/ITO structure with 30-nm-thick GO shows good switching performance with an on/off resistance ratio of 10(3), low set/reset voltage, and excellent data retention. The GO memory is also fabricated on a flexible substrate with no degradation in switching property, even when the substrate is bent down to 4-mm radius, indicating that the GO memory is an excellent candidate to be a memory device for future flexible electronics. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Flexible Resistive Switching Memory Device Based on Graphene Oxide | - |
dc.type | Article | - |
dc.identifier.wosid | 000283185500035 | - |
dc.identifier.scopusid | 2-s2.0-77956172739 | - |
dc.type.rims | ART | - |
dc.citation.volume | 31 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1005 | - |
dc.citation.endingpage | 1007 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2010.2053695 | - |
dc.contributor.localauthor | Kim, Sang Ouk | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Flexible memory | - |
dc.subject.keywordAuthor | graphene oxide | - |
dc.subject.keywordAuthor | resistive switching memory | - |
dc.subject.keywordPlus | WORK-FUNCTION | - |
dc.subject.keywordPlus | FILMS | - |
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