DC Field | Value | Language |
---|---|---|
dc.contributor.author | Im, Dong-Hyun | ko |
dc.contributor.author | Lee, Kong-Soo | ko |
dc.contributor.author | Kang, Yoongoo | ko |
dc.contributor.author | Jeong, Myoungho | ko |
dc.contributor.author | Park, Kwang Wuk | ko |
dc.contributor.author | Lee, Soon-Gun | ko |
dc.contributor.author | Ma, Jin-Won | ko |
dc.contributor.author | Kim, Youngseok | ko |
dc.contributor.author | Kim, Bonghyun | ko |
dc.contributor.author | Im, Ki-Vin | ko |
dc.contributor.author | Lim, Hanjin | ko |
dc.contributor.author | Lee, Jeong Yong | ko |
dc.date.accessioned | 2016-07-07T06:18:49Z | - |
dc.date.available | 2016-07-07T06:18:49Z | - |
dc.date.created | 2016-06-20 | - |
dc.date.created | 2016-06-20 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.16, no.5, pp.4906 - 4913 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | http://hdl.handle.net/10203/210016 | - |
dc.description.abstract | Native oxide removal prior to poly-Si contact and epitaxial growth of Si is the most critical technology to ensure process and device performances of poly-Si plugs and selective epitaxial growth (SEG) layers for DRAM, flash memory, and logic device. Recently, dry cleaning process for interfacial oxide removal has attracted a world-wide attention due to its superior passivation properties to conventional wet cleaning processes. In this study, we investigated the surface states of Si substrate during and after dry cleaning process, and the role of atomic elements including fluorine and hydrogen on the properties of subsequent deposited silicon layer using SIMS, XPS, and TEM analysis. The controlling of residual fluorine on the Si surface after dry cleaning is a key factor for clean interface. The mechanism of native oxide re-growth caused by residual fluorine after dry cleaning is proposed based on analytical results. | - |
dc.language | English | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | SURFACE | - |
dc.subject | NH3/NF3 | - |
dc.subject | REMOVAL | - |
dc.title | Interfacial Layer Control by Dry Cleaning Technology for Polycrystalline and Single Crystalline Silicon Growth | - |
dc.type | Article | - |
dc.identifier.wosid | 000386123100100 | - |
dc.identifier.scopusid | 2-s2.0-84971516620 | - |
dc.type.rims | ART | - |
dc.citation.volume | 16 | - |
dc.citation.issue | 5 | - |
dc.citation.beginningpage | 4906 | - |
dc.citation.endingpage | 4913 | - |
dc.citation.publicationname | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1166/jnn.2016.12255 | - |
dc.contributor.localauthor | Lee, Jeong Yong | - |
dc.contributor.nonIdAuthor | Lee, Kong-Soo | - |
dc.contributor.nonIdAuthor | Kang, Yoongoo | - |
dc.contributor.nonIdAuthor | Park, Kwang Wuk | - |
dc.contributor.nonIdAuthor | Lee, Soon-Gun | - |
dc.contributor.nonIdAuthor | Ma, Jin-Won | - |
dc.contributor.nonIdAuthor | Kim, Youngseok | - |
dc.contributor.nonIdAuthor | Kim, Bonghyun | - |
dc.contributor.nonIdAuthor | Im, Ki-Vin | - |
dc.contributor.nonIdAuthor | Lim, Hanjin | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | Surface | - |
dc.subject.keywordAuthor | Dry Cleaning | - |
dc.subject.keywordAuthor | Interface | - |
dc.subject.keywordAuthor | Polysilicon | - |
dc.subject.keywordAuthor | Residual Fluorine | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | NH3/NF3 | - |
dc.subject.keywordPlus | REMOVAL | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.