Thermo-compression bonding using Non-Conductive Films (NCFs) for 3-D TSV Micro-bump InterconnectionThermo-compression bonding using Non-Conductive Films (NCFs) for 3-D TSV Micro-bump Interconnection

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The Through Silicon Via (TSV) technology that uses Cu pillar/Sn-Ag double-bumps to interconnect between chips vertically is the most advanced state-of-art packaging technology. Non-conductive films (NCFs) have been introduced to enable the wafer-level processes and avoid the problems such as flux residues and voids trapping in fine-pitch interconnection. In order to increase the assembly productivity of 3-D TSV packages using NCFs, reducing the thermo-compression bonding time is needed. NCFs formulated with faster curing speed was introduced to obtain the higher degree-of-cure of NCFs after short thermo-compression bonding times. Curing behavior of low curing speed NCFs and faster curing speed NCFs were theoretically predicted using the Ozawa's method. The faster curing speed NCFs was cured 67.5 times faster than that of low curing speed NCFs at the same bonding temperature. An isothermal bonding method was also introduced and compared to conventional ramp-up bonding method in terms of bonding times and solder joint morphology. Solder joint gap of faster curing speed NCFs was determined after physical contact of solder because degree-of-cure of faster curing speed NCFs reached to 90 % at the solder melting temperature. Using the isothermal bonding with faster curing speed NCF, thermo-compression bonding time was reduced and good solder joint for 3D-TSV micro-bump interconnections was observed.
Publisher
IEEE 66th Electronic Components and Technology Conference
Issue Date
2016-06-01
Language
English
Citation

IEEE 66th Electronic Components and Technology Conference, pp.1809 - 1815

DOI
10.1109/ECTC.2016.134
URI
http://hdl.handle.net/10203/209590
Appears in Collection
MS-Conference Papers(학술회의논문)
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