DC Field | Value | Language |
---|---|---|
dc.contributor.author | Heo, Jae Sang | ko |
dc.contributor.author | Jo, Jeong-Wan | ko |
dc.contributor.author | Kang, Jingu | ko |
dc.contributor.author | Jeong, Chan-Yong | ko |
dc.contributor.author | Jeong, Hu Young | ko |
dc.contributor.author | Kim, Sung Kyu | ko |
dc.contributor.author | Kim, Kwanpyo | ko |
dc.contributor.author | Kwon, Hyuck-In | ko |
dc.contributor.author | Kim, Jaekyun | ko |
dc.contributor.author | Kim, Yong-Hoon | ko |
dc.contributor.author | Kim, Myung-Gil | ko |
dc.contributor.author | Park, Sung Kyu | ko |
dc.date.accessioned | 2016-07-05T07:52:07Z | - |
dc.date.available | 2016-07-05T07:52:07Z | - |
dc.date.created | 2016-05-31 | - |
dc.date.created | 2016-05-31 | - |
dc.date.issued | 2016-04 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.8, no.16, pp.10403 - 10412 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/209230 | - |
dc.description.abstract | The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal oxygen metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal oxygen metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 degrees C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 X 10(9), subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm(2) s(-1), and a bias stability of Delta V-TH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | DENSITY-OF-STATES | - |
dc.subject | GA-ZN-O | - |
dc.subject | ZINC-OXIDE | - |
dc.subject | SOL-GEL | - |
dc.subject | LOW-VOLTAGE | - |
dc.subject | DEGREES-C | - |
dc.subject | PERFORMANCE | - |
dc.subject | DIELECTRICS | - |
dc.subject | ELECTRONICS | - |
dc.title | Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000375245100039 | - |
dc.identifier.scopusid | 2-s2.0-84966356378 | - |
dc.type.rims | ART | - |
dc.citation.volume | 8 | - |
dc.citation.issue | 16 | - |
dc.citation.beginningpage | 10403 | - |
dc.citation.endingpage | 10412 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.5b12819 | - |
dc.contributor.nonIdAuthor | Heo, Jae Sang | - |
dc.contributor.nonIdAuthor | Jo, Jeong-Wan | - |
dc.contributor.nonIdAuthor | Kang, Jingu | - |
dc.contributor.nonIdAuthor | Jeong, Chan-Yong | - |
dc.contributor.nonIdAuthor | Jeong, Hu Young | - |
dc.contributor.nonIdAuthor | Kim, Kwanpyo | - |
dc.contributor.nonIdAuthor | Kwon, Hyuck-In | - |
dc.contributor.nonIdAuthor | Kim, Jaekyun | - |
dc.contributor.nonIdAuthor | Kim, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Kim, Myung-Gil | - |
dc.contributor.nonIdAuthor | Park, Sung Kyu | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | solution-processed metal oxides | - |
dc.subject.keywordAuthor | water treatment | - |
dc.subject.keywordAuthor | DUV irradiation | - |
dc.subject.keywordAuthor | low temperature | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | DENSITY-OF-STATES | - |
dc.subject.keywordPlus | GA-ZN-O | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | SOL-GEL | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | DEGREES-C | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
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