DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seong, Hyejeong | ko |
dc.contributor.author | Pak, Kwanyong | ko |
dc.contributor.author | Joo, Munkyu | ko |
dc.contributor.author | Choi, Junhwan | ko |
dc.contributor.author | Im, Sung Gap | ko |
dc.date.accessioned | 2016-06-07T08:55:20Z | - |
dc.date.available | 2016-06-07T08:55:20Z | - |
dc.date.created | 2016-03-14 | - |
dc.date.created | 2016-03-14 | - |
dc.date.issued | 2016-02 | - |
dc.identifier.citation | ADVANCED ELECTRONIC MATERIALS, v.2, no.2, pp.1500209 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | http://hdl.handle.net/10203/207623 | - |
dc.description.abstract | A series of new ultrathin polymer dielectric layers (sub-40 nm) is synthesized via initiated chemical vapor deposition (iCVD) for application in low-power, flexible organic thin-film transistors (OTFTs): poly(ethylene glycol dimethacrylate) (pEGDMA), poly(isobornyl acrylate) (pIBA), and poly(1H, 1H, 2H, 2H-perfluorodecyl acrylate) (pPFDA). The iCVD process is a solvent-free, vapor-phase process to deposit various kinds of functional polymer films with a high purity. The iCVD polymer dielectric layers commonly exhibit low leakage current densities (J(i)) less than 10(-8) A cm(-2) in the range of +/- 3 MV cm(-1), high breakdown field (E-break) over 4 MV cm(-1), and excellent flexibility up to a tensile strain of 3.3%. Hysteresis-free, low-voltage OTFTs made of the iCVD dielectric layers are demonstrated with various kinds of n- and p-type semiconductors. The superior performance of the iCVD dielectrics will enable the polymer films to play a pivotal role in developing various types of future organic electronic devices. | - |
dc.language | English | - |
dc.publisher | WILEY-BLACKWELL | - |
dc.title | Vapor-Phase Deposited Ultrathin Polymer Gate Dielectrics for High-Performance Organic Thin Film Transistors | - |
dc.type | Article | - |
dc.identifier.wosid | 000370335200003 | - |
dc.identifier.scopusid | 2-s2.0-85017144713 | - |
dc.type.rims | ART | - |
dc.citation.volume | 2 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 1500209 | - |
dc.citation.publicationname | ADVANCED ELECTRONIC MATERIALS | - |
dc.identifier.doi | 10.1002/aelm.201500209 | - |
dc.contributor.localauthor | Im, Sung Gap | - |
dc.contributor.nonIdAuthor | Choi, Junhwan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.subject.keywordPlus | NANODIELECTRICS | - |
dc.subject.keywordPlus | ICVD | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | CAPACITANCE | - |
dc.subject.keywordPlus | MONOLAYERS | - |
dc.subject.keywordPlus | INSULATOR | - |
dc.subject.keywordPlus | CIRCUITS | - |
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