DSpace at KOASAS
College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Space charge-induced unusually-high mobility of a solution-processed indium oxide thin film transistor with an ethylene glycol incorporated aluminum oxide gate dielectric

Cited 36 time in webofscience Cited 19 time in scopus
  • Hit : 301
  • Download : 0
Export
DC FieldValueLanguage
dc.contributor.authorPark, Hyungjinko
dc.contributor.authorNam, Yunyongko
dc.contributor.authorJin, Junghoko
dc.contributor.authorBae, Byeong-Sooko
dc.date.accessioned2016-04-20T07:03:09Z-
dc.date.available2016-04-20T07:03:09Z-
dc.date.created2016-01-04-
dc.date.created2016-01-04-
dc.date.issued2015-
dc.identifier.citationRSC ADVANCES, v.5, no.124, pp.102362 - 102366-
dc.identifier.issn2046-2069-
dc.identifier.urihttp://hdl.handle.net/10203/205659-
dc.description.abstractThe incorporation of ethylene glycol (EG) into a high-kappa aluminium oxide gate dielectric layer was achieved by a solution process, leading to a distinct increase in the mobility of indium oxide TFT. Frequency-dependent capacitance originating from residual EG was examined and the accompanying effects on indium oxide TFT were studied.-
dc.languageEnglish-
dc.publisherROYAL SOC CHEMISTRY-
dc.subjectHIGH-PERFORMANCE-
dc.subjectLOW-TEMPERATURE-
dc.subjectLOW-VOLTAGE-
dc.subjectTRANSPARENT-
dc.subjectSEMICONDUCTORS-
dc.subjectNITRATE-
dc.titleSpace charge-induced unusually-high mobility of a solution-processed indium oxide thin film transistor with an ethylene glycol incorporated aluminum oxide gate dielectric-
dc.typeArticle-
dc.identifier.wosid000366162300028-
dc.identifier.scopusid2-s2.0-84948784254-
dc.type.rimsART-
dc.citation.volume5-
dc.citation.issue124-
dc.citation.beginningpage102362-
dc.citation.endingpage102366-
dc.citation.publicationnameRSC ADVANCES-
dc.identifier.doi10.1039/c5ra21022d-
dc.contributor.localauthorBae, Byeong-Soo-
dc.contributor.nonIdAuthorJin, Jungho-
dc.type.journalArticleArticle-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusLOW-TEMPERATURE-
dc.subject.keywordPlusLOW-VOLTAGE-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusNITRATE-
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 36 items in WoS Click to see citing articles in records_button

Display Simple Item Record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.


rss_1.0 rss_2.0 atom_1.0