Black Silicon Photovoltaics

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dc.contributor.authorOtto, Martinko
dc.contributor.authorAlgasinger, Michaelko
dc.contributor.authorBranz, Howardko
dc.contributor.authorGesemann, Benjaminko
dc.contributor.authorGimpel, Thomasko
dc.contributor.authorFuechsel, Kevinko
dc.contributor.authorKaesebier, Thomasko
dc.contributor.authorKontermann, Stefanko
dc.contributor.authorKoynov, Svetoslavko
dc.contributor.authorLi, Xiaopengko
dc.contributor.authorNaumann, Volkerko
dc.contributor.authorOh, Jihunko
dc.contributor.authorSprafke, Alexander N.ko
dc.contributor.authorZiegler, Johannesko
dc.contributor.authorZilk, Matthiasko
dc.contributor.authorWehrspohn, Ralf B.ko
dc.date.accessioned2016-04-20T07:02:52Z-
dc.date.available2016-04-20T07:02:52Z-
dc.date.created2016-01-06-
dc.date.created2016-01-06-
dc.date.created2016-01-06-
dc.date.issued2015-02-
dc.identifier.citationADVANCED OPTICAL MATERIALS, v.3, no.2, pp.147 - 164-
dc.identifier.issn2195-1071-
dc.identifier.urihttp://hdl.handle.net/10203/205656-
dc.description.abstractThis article presents an overview of the fabrication methods of black silicon, their resulting morphologies, and a quantitative comparison of their optoelectronic properties. To perform this quantitative comparison, different groups working on black silicon solar cells have cooperated for this study. The optical absorption and the minority carrier lifetime are used as benchmark parameters. The differences in the fabrication processes plasma etching, chemical etching, or laser processing are discussed and compared with numerical models. Guidelines to optimize the relevant physical parameters, such as the correlation length, optimal height of the nanostructures, and the surface defect densities for optoelectronic applications are given.-
dc.languageEnglish-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectFEMTOSECOND-LASER-PULSES-
dc.subjectHETEROJUNCTION SOLAR-CELLS-
dc.subjectATOMIC LAYER DEPOSITION-
dc.subjectULTRATHIN AL2O3 FILMS-
dc.subjectP-TYPE SILICON-
dc.subjectSURFACE-RECOMBINATION-
dc.subjectMACROPOROUS SILICON-
dc.subjectINFRARED-ABSORPTION-
dc.subjectLIMITING EFFICIENCY-
dc.subjectTEXTURED SILICON-
dc.titleBlack Silicon Photovoltaics-
dc.typeArticle-
dc.identifier.wosid000349961400001-
dc.identifier.scopusid2-s2.0-84923221398-
dc.type.rimsART-
dc.citation.volume3-
dc.citation.issue2-
dc.citation.beginningpage147-
dc.citation.endingpage164-
dc.citation.publicationnameADVANCED OPTICAL MATERIALS-
dc.identifier.doi10.1002/adom.201400395-
dc.contributor.localauthorOh, Jihun-
dc.contributor.nonIdAuthorOtto, Martin-
dc.contributor.nonIdAuthorAlgasinger, Michael-
dc.contributor.nonIdAuthorBranz, Howard-
dc.contributor.nonIdAuthorGesemann, Benjamin-
dc.contributor.nonIdAuthorGimpel, Thomas-
dc.contributor.nonIdAuthorFuechsel, Kevin-
dc.contributor.nonIdAuthorKaesebier, Thomas-
dc.contributor.nonIdAuthorKontermann, Stefan-
dc.contributor.nonIdAuthorKoynov, Svetoslav-
dc.contributor.nonIdAuthorLi, Xiaopeng-
dc.contributor.nonIdAuthorNaumann, Volker-
dc.contributor.nonIdAuthorSprafke, Alexander N.-
dc.contributor.nonIdAuthorZiegler, Johannes-
dc.contributor.nonIdAuthorZilk, Matthias-
dc.contributor.nonIdAuthorWehrspohn, Ralf B.-
dc.description.isOpenAccessN-
dc.type.journalArticleReview-
dc.subject.keywordPlusFEMTOSECOND-LASER-PULSES-
dc.subject.keywordPlusHETEROJUNCTION SOLAR-CELLS-
dc.subject.keywordPlusATOMIC LAYER DEPOSITION-
dc.subject.keywordPlusULTRATHIN AL2O3 FILMS-
dc.subject.keywordPlusP-TYPE SILICON-
dc.subject.keywordPlusSURFACE-RECOMBINATION-
dc.subject.keywordPlusMACROPOROUS SILICON-
dc.subject.keywordPlusINFRARED-ABSORPTION-
dc.subject.keywordPlusLIMITING EFFICIENCY-
dc.subject.keywordPlusTEXTURED SILICON-
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