Efficient nanostructured ‘black’ silicon solar cell by copper-catalyzed metal-assisted etching

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We produce low-reflectivity nanostructured ‘black’ silicon (bSi) using copper (Cu) nanoparticles as the catalyst for metal-assisted etching and demonstrate a 17.0%-efficient Cu-etched bSi solar cell without any vacuum-deposited anti-reflection coating. The concentration ratio of HF to H2O2 in the etch solution provides control of the nanostructure morphology. The solar-spectrum-weighted average reflection (Rave) for bSi is as low as 3.1% on Cu-etched planar samples; we achieve lower reflectivity by nanostructuring of micron-scale pyramids. Successful Cu-based anti-reflection etching requires a concentration ratio [HF]/[H2O2] ≥ 3. Our 17.0%-efficient Cu-etched bSi photovoltaic cell with a pyramid-texture has a Rave of 3% and an open circuit voltage (Voc) of 616 mV that might be further improved by reducing near-surface phosphorus (P) densities
Publisher
WILEY-BLACKWELL
Issue Date
2015-10
Language
English
Article Type
Article
Keywords

POROUS SILICON; SURFACE

Citation

PROGRESS IN PHOTOVOLTAICS, v.23, no.10, pp.1375 - 1380

ISSN
1062-7995
DOI
10.1002/pip.2562
URI
http://hdl.handle.net/10203/205590
Appears in Collection
MS-Journal Papers(저널논문)
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