Silicide/Silicon Hetero-Junction Structure for Thermoelectric Applications

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We fabricated suicide/silicon hetero-junction structured thermoelectric device by CMOS process for the reduction of thermal conductivity with the scatterings of phonons at silicide/silicon interfaces. Electrical conductivities, Seebeck coefficients, power factors, and temperature differences are evaluated using the steady state analysis method. Platinum silicide/silicon multilayered structure showed an enhanced Seebeck coefficient and power factor characteristics, which was considered for p-leg element. Also, erbium suicide/silicon structure showed an enhanced Seebeck coefficient, which was considered for an n-leg element. Silicide/silicon multilayered structure is promising for thermoelectric applications by reducing thermal conductivity with an enhanced Seebeck coefficient. However, because of the high thermal conductivity of the silicon packing during thermal gradient is not a problem any temperature difference. Therefore, requires more testing and analysis in order to overcome this problem. Thermoelectric generators are devices that based on the Seebeck effect, convert temperature differences into electrical energy. Although thermoelectric phenomena have been used for heating and cooling applications quite extensively, it is only in recent years that interest has increased in energy generation.
Publisher
AMER SCIENTIFIC PUBLISHERS
Issue Date
2015-10
Language
English
Article Type
Article
Keywords

THERMAL-CONDUCTIVITY

Citation

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.10, pp.7472 - 7475

ISSN
1533-4880
DOI
10.1166/jnn.2015.11148
URI
http://hdl.handle.net/10203/205222
Appears in Collection
RIMS Journal Papers
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