DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seoungjun | ko |
dc.contributor.author | Gil, Youngun | ko |
dc.contributor.author | Choi, Youngran | ko |
dc.contributor.author | Kim, Kyoung-Kook | ko |
dc.contributor.author | Yun, Hyung Joong | ko |
dc.contributor.author | Son, Byoungchul | ko |
dc.contributor.author | Choi, Chel-Jong | ko |
dc.contributor.author | Kim, Hyunsoo | ko |
dc.date.accessioned | 2016-04-14T02:50:50Z | - |
dc.date.available | 2016-04-14T02:50:50Z | - |
dc.date.created | 2015-11-09 | - |
dc.date.created | 2015-11-09 | - |
dc.date.issued | 2015-10 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.7, no.40, pp.22385 - 22393 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/203674 | - |
dc.description.abstract | In this paper, the carrier transport mechanism at the metal/amorphous hafnium-indium-zinc oxide (a-HIZO) interface was investigated. The contact properties were found to be predominantly affected by the degree of interfacial reaction between the metals and a-HIZO; that is, a higher tendency to form metal oxide phases leads to excellent Ohmic contact via tunneling, which is associated with the generated donor-like oxygen vacancies. In this case, the Schottky-Mott theory is not applicable. Meanwhile, metals that do not form interfacial metal oxide, such as Pd, follow the Schottky-Mott theory, which results in rectifying Schottky behavior. The Schottky characteristics of the Pd contact to a-HIZO can be explained in terms of the barrier inhomogeneity model, which yields a mean barrier height of 1.40 eV and a standard deviation of 0.14 eV. The work function of a-HIZO could therefore be estimated as 3.7 eV, which is in good agreement with the ultraviolet photoelectron spectroscopy (3.68 eV). Our findings will be useful for establishing a strategy to form Ohmic or Schottky contacts to a-HIZO films, which will be essential for fabricating reliable high-performance electronic devices. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | WORK FUNCTION | - |
dc.subject | ELECTRON-TRANSPORT | - |
dc.subject | HIGH-MOBILITY | - |
dc.subject | SEMICONDUCTOR | - |
dc.subject | CONTACTS | - |
dc.subject | DENSITY | - |
dc.subject | ENERGY | - |
dc.subject | LAYER | - |
dc.subject | GAN | - |
dc.title | Carrier Transport at Metal/Amorphous Hafnium-Indium-Zinc Oxide Interfaces | - |
dc.type | Article | - |
dc.identifier.wosid | 000363001500034 | - |
dc.identifier.scopusid | 2-s2.0-84944350838 | - |
dc.type.rims | ART | - |
dc.citation.volume | 7 | - |
dc.citation.issue | 40 | - |
dc.citation.beginningpage | 22385 | - |
dc.citation.endingpage | 22393 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.5b06223 | - |
dc.contributor.nonIdAuthor | Kim, Seoungjun | - |
dc.contributor.nonIdAuthor | Gil, Youngun | - |
dc.contributor.nonIdAuthor | Choi, Youngran | - |
dc.contributor.nonIdAuthor | Kim, Kyoung-Kook | - |
dc.contributor.nonIdAuthor | Yun, Hyung Joong | - |
dc.contributor.nonIdAuthor | Choi, Chel-Jong | - |
dc.contributor.nonIdAuthor | Kim, Hyunsoo | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | carrier transport | - |
dc.subject.keywordAuthor | contact | - |
dc.subject.keywordAuthor | HIZO | - |
dc.subject.keywordAuthor | Schottky-Mott | - |
dc.subject.keywordAuthor | Ohmic | - |
dc.subject.keywordAuthor | Schottky | - |
dc.subject.keywordAuthor | interfacial reaction | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | WORK FUNCTION | - |
dc.subject.keywordPlus | ELECTRON-TRANSPORT | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | CONTACTS | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | GAN | - |
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