DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ockelmann, R. | ko |
dc.contributor.author | Mueller, A. | ko |
dc.contributor.author | Hwang, Jin Heui | ko |
dc.contributor.author | Jafarpisheh, S. | ko |
dc.contributor.author | Droegeler, M. | ko |
dc.contributor.author | Beschoten, B. | ko |
dc.contributor.author | Stampfer, C. | ko |
dc.date.accessioned | 2016-04-12T07:12:11Z | - |
dc.date.available | 2016-04-12T07:12:11Z | - |
dc.date.created | 2015-09-07 | - |
dc.date.created | 2015-09-07 | - |
dc.date.created | 2015-09-07 | - |
dc.date.issued | 2015-08 | - |
dc.identifier.citation | PHYSICAL REVIEW B, v.92, no.8 | - |
dc.identifier.issn | 2469-9950 | - |
dc.identifier.uri | http://hdl.handle.net/10203/203188 | - |
dc.description.abstract | Freestanding Bi2Se3 single-crystal flakes of variable thicknesses are grown using a catalyst-free vapor-solid synthesis and are subsequently transferred onto a clean Si++/SiO2 substrate where the flakes are contacted in Hall bar geometry. Low-temperature magnetoresistance measurements are presented which show a linear magnetoresistance for high magnetic fields and weak antilocalization (WAL) at low fields. Despite an overall strong charge-carrier tunability for thinner devices, we find that electron transport is dominated by bulk contributions for all devices. Phase-coherence lengths l(phi) as extracted from WAL measurements increase linearly with increasing electron density exceeding 1 mu m at 1.7 K. Although l(phi) is in qualitative agreement with electron-electron interaction-induced dephasing, we find that spin-flip scattering processes limit l(phi) at low temperatures. | - |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Phase-coherent transport in catalyst-free vapor phase deposited Bi2Se3 crystals | - |
dc.type | Article | - |
dc.identifier.wosid | 000359676600009 | - |
dc.identifier.scopusid | 2-s2.0-84940062236 | - |
dc.type.rims | ART | - |
dc.citation.volume | 92 | - |
dc.citation.issue | 8 | - |
dc.citation.publicationname | PHYSICAL REVIEW B | - |
dc.identifier.doi | 10.1103/PhysRevB.92.085417 | - |
dc.contributor.nonIdAuthor | Ockelmann, R. | - |
dc.contributor.nonIdAuthor | Mueller, A. | - |
dc.contributor.nonIdAuthor | Jafarpisheh, S. | - |
dc.contributor.nonIdAuthor | Droegeler, M. | - |
dc.contributor.nonIdAuthor | Beschoten, B. | - |
dc.contributor.nonIdAuthor | Stampfer, C. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TOPOLOGICAL INSULATOR BI2SE3 | - |
dc.subject.keywordPlus | SINGLE DIRAC CONE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | LINEAR MAGNETORESISTANCE | - |
dc.subject.keywordPlus | MAJORANA FERMIONS | - |
dc.subject.keywordPlus | BI2TE3 FILMS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | NANORIBBONS | - |
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