Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs

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dc.contributor.authorBae, Hagyoulko
dc.contributor.authorSeo, Hyojoonko
dc.contributor.authorJun, Sungwooko
dc.contributor.authorChoi, Hyunjunko
dc.contributor.authorAhn, Jaeyeopko
dc.contributor.authorHwang, Junseokko
dc.contributor.authorLee, Jungminko
dc.contributor.authorOh, Saeroonterko
dc.contributor.authorBae, Jong-Ukko
dc.contributor.authorChoi, Sung-Jinko
dc.contributor.authorKim, Dae Hwanko
dc.contributor.authorKim, Dong Myongko
dc.date.accessioned2016-04-06T01:23:20Z-
dc.date.available2016-04-06T01:23:20Z-
dc.date.created2015-04-10-
dc.date.created2015-04-10-
dc.date.issued2014-10-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.10, pp.3566 - 3569-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/202914-
dc.description.abstractA sub-bandgap optoelectronic differential ideality factor technique is proposed for extraction of the intrinsic density-of-states (DOS) over the bandgap in amorphous semiconductor thin-film transistors (TFTs). In the proposed technique, the gate bias-dependent differential change in the difference of ideality factors (d Delta eta(V-GS)/dV(GS)) between dark and sub-bandgap photonic excitation condition is employed. With the sub-bandgap photons (h nu < E-g), the photonic excitation of electrons is confined only from the localized DOS over the bandgap. We applied the proposed technique to a-InGaZnO TFTs with W/L = 50/25 mu m/mu m and extracted the energy distribution of the intrinsic DOS for the localized states over the bandgap.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectDENSITY-OF-STATES-
dc.subjectCAPACITANCE-
dc.titleFully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs-
dc.typeArticle-
dc.identifier.wosid000342909800032-
dc.identifier.scopusid2-s2.0-84907459038-
dc.type.rimsART-
dc.citation.volume61-
dc.citation.issue10-
dc.citation.beginningpage3566-
dc.citation.endingpage3569-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2014.2348592-
dc.contributor.nonIdAuthorSeo, Hyojoon-
dc.contributor.nonIdAuthorJun, Sungwoo-
dc.contributor.nonIdAuthorChoi, Hyunjun-
dc.contributor.nonIdAuthorAhn, Jaeyeop-
dc.contributor.nonIdAuthorHwang, Junseok-
dc.contributor.nonIdAuthorLee, Jungmin-
dc.contributor.nonIdAuthorOh, Saeroonter-
dc.contributor.nonIdAuthorBae, Jong-Uk-
dc.contributor.nonIdAuthorChoi, Sung-Jin-
dc.contributor.nonIdAuthorKim, Dae Hwan-
dc.contributor.nonIdAuthorKim, Dong Myong-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorAmorphous oxide semiconductor-
dc.subject.keywordAuthordensity-of-states (DOS)-
dc.subject.keywordAuthordifferential ideality factor-
dc.subject.keywordAuthorInGaZnO (IGZO)-
dc.subject.keywordAuthoroptoelectronic-
dc.subject.keywordAuthorsubgap thin-film transistor (TFT)-
dc.subject.keywordAuthorsubthreshold-
dc.subject.keywordAuthorTFT-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusDENSITY-OF-STATES-
dc.subject.keywordPlusCAPACITANCE-
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