DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Hagyoul | ko |
dc.contributor.author | Seo, Hyojoon | ko |
dc.contributor.author | Jun, Sungwoo | ko |
dc.contributor.author | Choi, Hyunjun | ko |
dc.contributor.author | Ahn, Jaeyeop | ko |
dc.contributor.author | Hwang, Junseok | ko |
dc.contributor.author | Lee, Jungmin | ko |
dc.contributor.author | Oh, Saeroonter | ko |
dc.contributor.author | Bae, Jong-Uk | ko |
dc.contributor.author | Choi, Sung-Jin | ko |
dc.contributor.author | Kim, Dae Hwan | ko |
dc.contributor.author | Kim, Dong Myong | ko |
dc.date.accessioned | 2016-04-06T01:23:20Z | - |
dc.date.available | 2016-04-06T01:23:20Z | - |
dc.date.created | 2015-04-10 | - |
dc.date.created | 2015-04-10 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.10, pp.3566 - 3569 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/202914 | - |
dc.description.abstract | A sub-bandgap optoelectronic differential ideality factor technique is proposed for extraction of the intrinsic density-of-states (DOS) over the bandgap in amorphous semiconductor thin-film transistors (TFTs). In the proposed technique, the gate bias-dependent differential change in the difference of ideality factors (d Delta eta(V-GS)/dV(GS)) between dark and sub-bandgap photonic excitation condition is employed. With the sub-bandgap photons (h nu < E-g), the photonic excitation of electrons is confined only from the localized DOS over the bandgap. We applied the proposed technique to a-InGaZnO TFTs with W/L = 50/25 mu m/mu m and extracted the energy distribution of the intrinsic DOS for the localized states over the bandgap. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | DENSITY-OF-STATES | - |
dc.subject | CAPACITANCE | - |
dc.title | Fully Current-Based Sub-Bandgap Optoelectronic Differential Ideality Factor Technique and Extraction of Subgap DOS in Amorphous Semiconductor TFTs | - |
dc.type | Article | - |
dc.identifier.wosid | 000342909800032 | - |
dc.identifier.scopusid | 2-s2.0-84907459038 | - |
dc.type.rims | ART | - |
dc.citation.volume | 61 | - |
dc.citation.issue | 10 | - |
dc.citation.beginningpage | 3566 | - |
dc.citation.endingpage | 3569 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2014.2348592 | - |
dc.contributor.nonIdAuthor | Seo, Hyojoon | - |
dc.contributor.nonIdAuthor | Jun, Sungwoo | - |
dc.contributor.nonIdAuthor | Choi, Hyunjun | - |
dc.contributor.nonIdAuthor | Ahn, Jaeyeop | - |
dc.contributor.nonIdAuthor | Hwang, Junseok | - |
dc.contributor.nonIdAuthor | Lee, Jungmin | - |
dc.contributor.nonIdAuthor | Oh, Saeroonter | - |
dc.contributor.nonIdAuthor | Bae, Jong-Uk | - |
dc.contributor.nonIdAuthor | Choi, Sung-Jin | - |
dc.contributor.nonIdAuthor | Kim, Dae Hwan | - |
dc.contributor.nonIdAuthor | Kim, Dong Myong | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Amorphous oxide semiconductor | - |
dc.subject.keywordAuthor | density-of-states (DOS) | - |
dc.subject.keywordAuthor | differential ideality factor | - |
dc.subject.keywordAuthor | InGaZnO (IGZO) | - |
dc.subject.keywordAuthor | optoelectronic | - |
dc.subject.keywordAuthor | subgap thin-film transistor (TFT) | - |
dc.subject.keywordAuthor | subthreshold | - |
dc.subject.keywordAuthor | TFT | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | DENSITY-OF-STATES | - |
dc.subject.keywordPlus | CAPACITANCE | - |
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