Mechanisms of semiconductor nanostructure formation

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dc.contributor.authorGoldman, RSko
dc.contributor.authorShin, Bko
dc.contributor.authorLita, Bko
dc.date.accessioned2015-11-20T13:03:26Z-
dc.date.available2015-11-20T13:03:26Z-
dc.date.created2014-03-17-
dc.date.created2014-03-17-
dc.date.issued2003-01-
dc.identifier.citationPHYSICA STATUS SOLIDI (A) APPLIED RESEARCH, v.195, no.1, pp.151 - 158-
dc.identifier.issn0031-8965-
dc.identifier.urihttp://hdl.handle.net/10203/201851-
dc.description.abstractWe have examined the formation mechanisms of a variety of semiconductor nanostructures, including phase separation-induced alloy nanostructures and strain-induced self-assembled quantum dots. Using data from cross-sectional scanning tunneling microscopy, in conjunction with X-ray reciprocal space maps, we have developed new models for self-ordering of InAs/GaAs quantum dot superlattices and spontaneous lateral phase separation in InAlAs alloys. These models are likely to be applicable to a wide range of heteroepitaxial semiconductor nanostructures.-
dc.languageEnglish-
dc.publisherJohn Wiley & Sons Ltd.-
dc.subjectQUANTUM-DOT SUPERLATTICES-
dc.subjectINGAAS ALLOYS-
dc.subjectORGANIZATION-
dc.subjectSEGREGATION-
dc.subjectGROWTH-
dc.titleMechanisms of semiconductor nanostructure formation-
dc.typeArticle-
dc.identifier.wosid000180796700024-
dc.identifier.scopusid2-s2.0-0037278353-
dc.type.rimsART-
dc.citation.volume195-
dc.citation.issue1-
dc.citation.beginningpage151-
dc.citation.endingpage158-
dc.citation.publicationnamePHYSICA STATUS SOLIDI (A) APPLIED RESEARCH-
dc.identifier.doi10.1002/pssa.200306280-
dc.contributor.localauthorShin, B-
dc.contributor.nonIdAuthorGoldman, RS-
dc.contributor.nonIdAuthorLita, B-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordPlusQUANTUM-DOT SUPERLATTICES-
dc.subject.keywordPlusINGAAS ALLOYS-
dc.subject.keywordPlusORGANIZATION-
dc.subject.keywordPlusSEGREGATION-
dc.subject.keywordPlusGROWTH-
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