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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Effects of gate bias stress on the electrical characteristics of ZnO thin film transistor

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dc.contributor.authorJeon, Jae-Hongko
dc.contributor.authorChoe, Hee-Hwanko
dc.contributor.authorLee, Kang-Woongko
dc.contributor.authorShin, Jae-Heonko
dc.contributor.authorHwang, Chi-Sunko
dc.contributor.authorPark, Sang-Hee Koko
dc.contributor.authorSeo, Jong-Hyunko
dc.date.accessioned2015-11-20T12:56:29Z-
dc.date.available2015-11-20T12:56:29Z-
dc.date.created2014-04-21-
dc.date.created2014-04-21-
dc.date.issued2008-07-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.412 - 415-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/201786-
dc.description.abstractThe electrical stability of ZnO thin film transistors (TFTs) has been investigated. The results of stress test on a ZnO TFT differed from those on an a-Si:H TFT. Therefore, the instability of the ZnO TFT cannot be explained with the conventional degradation mechanisms of an a-Si:H TFT. We fabricated ZnO TFTs by varying key factors related to the electrical stability. With the results of various bias tests, possible mechanisms for the abnormal behavior under gate bias stress are discussed.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectROOM-TEMPERATURE-
dc.titleEffects of gate bias stress on the electrical characteristics of ZnO thin film transistor-
dc.typeArticle-
dc.identifier.wosid000257664700089-
dc.identifier.scopusid2-s2.0-49649087750-
dc.type.rimsART-
dc.citation.volume53-
dc.citation.issue1-
dc.citation.beginningpage412-
dc.citation.endingpage415-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorJeon, Jae-Hong-
dc.contributor.nonIdAuthorChoe, Hee-Hwan-
dc.contributor.nonIdAuthorLee, Kang-Woong-
dc.contributor.nonIdAuthorShin, Jae-Heon-
dc.contributor.nonIdAuthorHwang, Chi-Sun-
dc.contributor.nonIdAuthorSeo, Jong-Hyun-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorzinc oxide-
dc.subject.keywordAuthorthin film transistor-
dc.subject.keywordAuthorelectrical stability-
dc.subject.keywordPlusROOM-TEMPERATURE-
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MS-Journal Papers(저널논문)
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