DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Doo-Hee | ko |
dc.contributor.author | Yang, Shinhyuk | ko |
dc.contributor.author | Ryu, Min Ki | ko |
dc.contributor.author | Park, Sang-Hee Ko | ko |
dc.contributor.author | Byun, Chunwon | ko |
dc.contributor.author | Yoon, Sung Min | ko |
dc.contributor.author | Chu, Hye-Yong | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.date.accessioned | 2015-11-20T12:55:11Z | - |
dc.date.available | 2015-11-20T12:55:11Z | - |
dc.date.created | 2014-04-21 | - |
dc.date.created | 2014-04-21 | - |
dc.date.issued | 2009-01 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.30, no.1, pp.48 - 50 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201772 | - |
dc.description.abstract | We have fabricated the transparent bottom gate thin-film transistors (TFTs) using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and the AT-ZIO TFT showed a field effect mobility of 15.6 cm(2)/Vs even before annealing. The mobility increased with increasing the In2O3 content and postannealing temperature up to 250 degrees C. The AT-ZIO TFT exhibited a field effect mobility of 30.2 cm(2) /Vs, a subthreshold swing of 0.17 V/dec, and an on/off current ratio of more than 10(9). | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | SEMICONDUCTORS | - |
dc.subject | TRANSPORT | - |
dc.title | Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide | - |
dc.type | Article | - |
dc.identifier.wosid | 000262364200017 | - |
dc.identifier.scopusid | 2-s2.0-58149522488 | - |
dc.type.rims | ART | - |
dc.citation.volume | 30 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 48 | - |
dc.citation.endingpage | 50 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2008.2008732 | - |
dc.contributor.localauthor | Park, Sang-Hee Ko | - |
dc.contributor.nonIdAuthor | Cho, Doo-Hee | - |
dc.contributor.nonIdAuthor | Yang, Shinhyuk | - |
dc.contributor.nonIdAuthor | Ryu, Min Ki | - |
dc.contributor.nonIdAuthor | Byun, Chunwon | - |
dc.contributor.nonIdAuthor | Yoon, Sung Min | - |
dc.contributor.nonIdAuthor | Chu, Hye-Yong | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Oxide | - |
dc.subject.keywordAuthor | sputtering | - |
dc.subject.keywordAuthor | thin-film transistor (TFT) | - |
dc.subject.keywordAuthor | transparent | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | TRANSPORT | - |
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