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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States

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dc.contributor.authorShin, Jae-Heonko
dc.contributor.authorHwang, Chi-Sunko
dc.contributor.authorCheong, Woo-Seokko
dc.contributor.authorPark, Sang-Hee Koko
dc.contributor.authorCho, Doo-Heeko
dc.contributor.authorRyu, Minkiko
dc.contributor.authorYoon, Sung-Minko
dc.contributor.authorByun, Chun-Wonko
dc.contributor.authorYang, Shin-Hyukko
dc.contributor.authorCho, Kyoung Ikko
dc.contributor.authorChu, Hye Yongko
dc.date.accessioned2015-11-20T12:54:58Z-
dc.date.available2015-11-20T12:54:58Z-
dc.date.created2014-04-21-
dc.date.created2014-04-21-
dc.date.issued2009-01-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.1, pp.527 - 530-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/201770-
dc.description.abstractWe demonstrate that the current-voltage (I-V) characteristics of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) can be modeled by using the well-known physical model based on the exponential density of deep and tail states. The threshold voltage and the voltage-dependent field-effect mobility can be determined without ambiguity by using the newly proposed scheme. Both the transfer and the output curves of the device are well reproduced by sing the proposed modeling scheme with the obtained parameters.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectROOM-TEMPERATURE-
dc.subjectDEPOSITION-
dc.subjectMOBILITY-
dc.subjectVOLTAGE-
dc.subjectLAYER-
dc.subjectTFTS-
dc.titleAnalytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States-
dc.typeArticle-
dc.identifier.wosid000262520600024-
dc.identifier.scopusid2-s2.0-60049084146-
dc.type.rimsART-
dc.citation.volume54-
dc.citation.issue1-
dc.citation.beginningpage527-
dc.citation.endingpage530-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorShin, Jae-Heon-
dc.contributor.nonIdAuthorHwang, Chi-Sun-
dc.contributor.nonIdAuthorCheong, Woo-Seok-
dc.contributor.nonIdAuthorCho, Doo-Hee-
dc.contributor.nonIdAuthorRyu, Minki-
dc.contributor.nonIdAuthorYoon, Sung-Min-
dc.contributor.nonIdAuthorByun, Chun-Won-
dc.contributor.nonIdAuthorYang, Shin-Hyuk-
dc.contributor.nonIdAuthorCho, Kyoung Ik-
dc.contributor.nonIdAuthorChu, Hye Yong-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorOxide TFT-
dc.subject.keywordAuthorIGZO-
dc.subject.keywordAuthorAnalytical modeling-
dc.subject.keywordAuthorDeep state-
dc.subject.keywordAuthorTail state-
dc.subject.keywordAuthorThreshold voltage-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusROOM-TEMPERATURE-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusMOBILITY-
dc.subject.keywordPlusVOLTAGE-
dc.subject.keywordPlusLAYER-
dc.subject.keywordPlusTFTS-
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