DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Sung-Min | ko |
dc.contributor.author | Yang, Shinhyuk | ko |
dc.contributor.author | Byun, Chunwon | ko |
dc.contributor.author | Park, Sang-Hee K. | ko |
dc.contributor.author | Cho, Doo-Hee | ko |
dc.contributor.author | Jung, Soon-Won | ko |
dc.contributor.author | Kwon, Oh-Sang | ko |
dc.contributor.author | Hwang, Chi-Sun | ko |
dc.date.accessioned | 2015-11-20T12:51:07Z | - |
dc.date.available | 2015-11-20T12:51:07Z | - |
dc.date.created | 2014-04-18 | - |
dc.date.created | 2014-04-18 | - |
dc.date.issued | 2010-03 | - |
dc.identifier.citation | ADVANCED FUNCTIONAL MATERIALS, v.20, no.6, pp.921 - 926 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | http://hdl.handle.net/10203/201733 | - |
dc.description.abstract | A fully transparent non-volatile memory thin-film transistor (T-MTFT) is demonstrated. The gate stack is composed of organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and oxide semiconducting Al-Zn-Sn-O (AZTO) layers, in which thin Al(2)O(3) is introduced between two layers. All the fabrication processes are performed below 200 degrees C on the glass substrate. The transmittance of the fabricated device was more than 90% at the wavelength of 550 nm. The memory window obtained in the T-MTFT was 7.5 V with a gate voltage sweep of -10 to 10V, and it was still 1.8 V even with a lower voltage sweep of -6 to 6 V. The field-effect mobility, subthreshold swing, on/off ratio, and gate leakage currents were obtained to be 32.2 cm(2) V(-1) s(-1), 0.45 V decade(-1), 10(8), and 10(-13) A, respectively. All these characteristics correspond to the best performances among all types of nonvolatile memory transistors reported so far, although the programming speed and retention time should be more improved. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | FIELD-EFFECT TRANSISTOR | - |
dc.subject | COPOLYMER | - |
dc.subject | ZNO | - |
dc.title | Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 degrees C | - |
dc.type | Article | - |
dc.identifier.wosid | 000276267600008 | - |
dc.identifier.scopusid | 2-s2.0-77950231683 | - |
dc.type.rims | ART | - |
dc.citation.volume | 20 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 921 | - |
dc.citation.endingpage | 926 | - |
dc.citation.publicationname | ADVANCED FUNCTIONAL MATERIALS | - |
dc.identifier.doi | 10.1002/adfm.200902095 | - |
dc.contributor.localauthor | Park, Sang-Hee K. | - |
dc.contributor.nonIdAuthor | Yoon, Sung-Min | - |
dc.contributor.nonIdAuthor | Yang, Shinhyuk | - |
dc.contributor.nonIdAuthor | Byun, Chunwon | - |
dc.contributor.nonIdAuthor | Cho, Doo-Hee | - |
dc.contributor.nonIdAuthor | Jung, Soon-Won | - |
dc.contributor.nonIdAuthor | Kwon, Oh-Sang | - |
dc.contributor.nonIdAuthor | Hwang, Chi-Sun | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTOR | - |
dc.subject.keywordPlus | COPOLYMER | - |
dc.subject.keywordPlus | ZNO | - |
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