DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Byungha | ko |
dc.contributor.author | Weber, Justin R. | ko |
dc.contributor.author | Long, Rathnait D. | ko |
dc.contributor.author | Hurley, Paul K. | ko |
dc.contributor.author | Van de Walle, Chris G. | ko |
dc.contributor.author | McIntyre, Paul C. | ko |
dc.date.accessioned | 2015-11-20T12:51:01Z | - |
dc.date.available | 2015-11-20T12:51:01Z | - |
dc.date.created | 2014-03-14 | - |
dc.date.created | 2014-03-14 | - |
dc.date.issued | 2010-04 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.96, no.15 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/201732 | - |
dc.description.abstract | We report experimental and theoretical studies of defects producing fixed charge within Al(2)O(3) layers grown by atomic layer deposition (ALD) on In(0.53)Ga(0.47)As(001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ALD-Al(2)O(3)/n-In(0.53)Ga(0.47)As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al(2)O(3). We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al(2)O(3). | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | TOTAL-ENERGY CALCULATIONS | - |
dc.subject | AUGMENTED-WAVE METHOD | - |
dc.subject | BASIS-SET | - |
dc.subject | AL2O3 | - |
dc.subject | DEFECTS | - |
dc.subject | SILICON | - |
dc.subject | STACKS | - |
dc.subject | FILMS | - |
dc.title | Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates | - |
dc.type | Article | - |
dc.identifier.wosid | 000276794100054 | - |
dc.identifier.scopusid | 2-s2.0-77951612123 | - |
dc.type.rims | ART | - |
dc.citation.volume | 96 | - |
dc.citation.issue | 15 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.3399776 | - |
dc.contributor.localauthor | Shin, Byungha | - |
dc.contributor.nonIdAuthor | Weber, Justin R. | - |
dc.contributor.nonIdAuthor | Long, Rathnait D. | - |
dc.contributor.nonIdAuthor | Hurley, Paul K. | - |
dc.contributor.nonIdAuthor | Van de Walle, Chris G. | - |
dc.contributor.nonIdAuthor | McIntyre, Paul C. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | aluminium compounds | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | crystal defects | - |
dc.subject.keywordAuthor | dangling bonds | - |
dc.subject.keywordAuthor | gallium arsenide | - |
dc.subject.keywordAuthor | hydrogenation | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | passivation | - |
dc.subject.keywordAuthor | substrates | - |
dc.subject.keywordPlus | TOTAL-ENERGY CALCULATIONS | - |
dc.subject.keywordPlus | AUGMENTED-WAVE METHOD | - |
dc.subject.keywordPlus | BASIS-SET | - |
dc.subject.keywordPlus | AL2O3 | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | STACKS | - |
dc.subject.keywordPlus | FILMS | - |
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